SEMI P20-92N GUIDELINE FOR CATALOG PUBLICATION OF EB RESIST

SEMI P20-92N GUIDELINE FOR CATALOG PUBLICATION OF EB RESIST

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1、SEMIP20-92N/A©SEMI1992,1996GUIDELINEFORCATALOGPUBLICATIONOFEBRESISTPARAMETERS(PROPOSAL)1Purposeratus.Specifyheatingrateandcoolingrateifmoni-tored.ThepurposeofthisguidelineistoprovideabaselineforpublicationsofEBresistparameters.Itcanalsobe4.2.5ThicknessM

2、easurementMethodsÑThicknessusedasaguidetoevaluateresistprocessparameters.measurementinstrumentsandmeasurementmethod.InThisguidelineisintendedtobeapplicableforelectroncaseofalightinterferancethicknessmeasurementbeamprocesses.apparatus,specifytherefractiv

3、eindexasaparameterusedinthemeasurement.TheparametersforEBResistpublicationarediscussedbelow.5FilmThicknesses2ResistCommercialNameDeÞnesresistthicknessesandmeasurementconditionsforresistparameterdescriptionsinandafterSection9.Describeresistcommercialname

4、.Unitismmor.3ResistProperties5.1FilmThicknessDeÞnitions3.1PolymerProperties5.1.1TiÑInitialthicknessafterprebakepriortoexposure.3.1.1ComponentsÑDescriberesistcomponents.Chemicalstructureisnotnecessarilyrequired.5.1.2TeÑExposedregionthicknessafterdevelop-

5、ment.3.1.2MolecularWeightÑDescribeMw,MnandMw/Mnifknown.5.1.3TuÑUnexposedregionthicknessafterdevel-opment,andafterpostbakeifrequired.3.1.3ThermalCharacteristicsÑDescribeTgandTm.5.1.4NTeÑTe/Ti.Normalizedexposedregionthick-ness.3.2ResistSolutionProperties5

6、.1.5NTuÑTu/Ti.Normalizedunexposedregion3.2.1SolventÑSpecifychemicalnames.thickness.3.2.2ViscosityÑSolutionviscosity,cP,25¡C.5.2ThicknessMeasurementConditionsÑThickness3.2.3SolidContentÑWeight%.measurementconditionsshouldbethesameasdescribedinSection4.2.

7、5.Incaseofmeasurementsof4FilmFormingPropertiesexposedregionthickness,exposedregionareashould4.1ThicknessCurvesÑPlotfilmthicknessT(mmorbelargerthan20mmonallsides.)afterprebakeversusspinningspeedR(rpm).Here,xaxisislog(R)andyaxisislog(T).6SamplePreparation

8、4.2ConditionsÑSpecifyfollowingconditions.DeÞnessamplepreparationmethodsforresistparame-terdescriptionsinandafterSection9.4.2.1SubstrateÑSiliconwaferorchromemaskblank.Specifyitsstructure.6.1FilmThicknessÑTi.0.50±0.20mm(5000±200)is

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