SEMI P29-0997 GUIDELINE FOR DESCRIPTION OF CHARACTERISTICS

SEMI P29-0997 GUIDELINE FOR DESCRIPTION OF CHARACTERISTICS

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时间:2019-10-18

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1、SEMIP29-0997N/A©SEMI1997GUIDELINEFORDESCRIPTIONOFCHARACTERISTICSSPECIFICTOHALFTONE/ATTENUATEDPHASESHIFTMASKSANDMASKBLANKS1Purpose4.1.2phaseshiftmaskÑAphotomaskdesignedtoincreaseresolutionthroughintentionalcontrolofthe1.1ThisguidelinedeÞnesthecharacteristicsspeciÞcexposurelightphase.tohalftone

2、/attenuatedphaseshiftmasksandmaskblanks.4.2TermsforStructuralDescription1.2Thisguidelineisintendedtoprovideabaselinefor4.2.1additionalÞlmtypeopaqueringÑAnopaquespeciÞcationofphaseshiftmasksandmaskblankstoringwhichiscomposedoflightshieldmaterialsotherbeagreedbetweenthesupplieranduser.thanthesh

3、ifter.Becausethephaseshiftmaskisstillunderdevelop-4.2.2embeddedshiftertypeopaqueringÑAnopaquement,itmaybeneededtocontinuetheresearchactiv-ringwhichiscomposedofsmallrectanglesorline/itytostandardizeaÞnalspeciÞcation.spacepatternsinashifter.4.2.3multi-layerhalftonephaseshiftmaskÑAhalf-2Scopeton

4、ephaseshiftmaskhavingmultiplethinÞlmsofdif-2.1Thisguidelineappliestohalftone/attenuatedphaseferentmaterialcompositionstogiveacertainphaseshiftmasksandmaskblanksforg-line,i-line,KrF,differenceandtransmittance.ThelayerthatadjoinstheArF,and/orDUVwavelengths.substrateshouldbecalledtheÞrstlayer.2.

5、2Thesetypesofmaskscanbecalledeitherhalftone4.2.4opaqueringÑAnareaofacertainwidth,adja-orattenuatedphaseshiftmasks.Thisguidelineusescenttotheperipheryofthedesiredexposureareaona"halftonephaseshiftmasks"asthenomenclature.reticle,locatedinthenon-exposureareaofthereticletoobtainadarkportionrequir

6、edinawaferlithography2.3Theitemswhicharenotdescribedinthisguide-process.lineshallconformtoSEMIP1.4.2.5single-layerhalftonephaseshiftmaskÑHalf-3ReferencedDocumentstonephaseshiftmaskhavingathinÞlmofuniformNOTE:Aslistedorrevised,alldocumentscitedshallmaterialcompositiontogiveacertainphasediffere

7、ncebethelatestpublicationsofadoptedstandards.andtransmittance.3.1SEMIDocuments4.3TermsforDescriptionofOpticalCharacteristicsSEMIP1ÑSpeciÞcationforHardSurfacePho-4.3.1glasssidereßectivityÑAratioofintensityoftomaskSubstratesreßectedlighttointen

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