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1、PhotonicCrystalCavitiesinCubic(3C)PolytypeSiliconCarbideFilmsMarinaRadulaski,1,*ThomasM.Babinec,1SoniaBuckley,1ArmandRundquist,1JProvine,2KassemAlassaad,3GabrielFerro,3andJelenaVučković11E.L.GinztonLaboratory,StanfordUniversity,Stanford,CA94305,U.S.A.2DepartmentofElectricalEngineering,StanfordUniver
2、sity,Stanford,CA94305,U.S.A.3LaboratoriedesMultimateriauxetInterfaces,UniversitedeLyon,69622VilleurbanneCedex,France*marina.radulaski@stanford.eduAbstract:Wepresentthedesign,fabrication,andcharacterizationofhighqualityfactor(Q~103)andsmallmodevolume(V~0.75(λ/n)3)planarphotoniccrystalcavitiesfromcubi
3、c(3C)thinfilms(thickness~200nm)ofsiliconcarbide(SiC)grownepitaxiallyonasiliconsubstrate.Wedemonstratecavityresonancesacrossthetelecommunicationsband,withwavelengthsfrom1.25–1.6μm.Finally,wediscusspossibleapplicationsinnonlinearoptics,opticalinterconnects,andquantuminformationscience.OCIScodes:(160.5
4、293)Photonicbandgapmaterials;(160.5298)Photoniccrystals.Referencesandlinks1.I.Aharonovich,S.Castelletto,D.A.Simpson,C.-H.Su,A.D.Greentree,andS.Prawer,"Diamond-basedsingle-photonemitters,”Rep.Prog.Phys.74,076501(2011).2.E.Togan,Y.Chu,A.S.Trifonov,L.Jiang,J.Maze,L.Childress,M.V.G.Dutt,A.S.Sorensen,P.R
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