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1、ARTICLESEmbeddedcavitiesandwaveguidesinthree-dimensionalsiliconphotoniccrystalsSTEPHANIEA.RINNE,FLORENCIOGARCI´A-SANTAMARI´AANDPAULV.BRAUN*DepartmentofMaterialsScienceandEngineering,BeckmanInstitute,andFrederickSeitzMaterialsResearchLaboratory,UniversityofIllinoisatUrbana-Champaig
2、n,Urbana,Illinois61801,USATheseauthorscontributedequallytothiswork.*e-mail:pbraun@uiuc.eduPublishedonline:16December2007;doi:10.1038/nphoton.2007.252Tofulfilthepromisethatcomplete-photonic-bandgapmaterialsholdforoptoelectronicsapplications,theincorporationofthree-dimensionallyengin
3、eereddefectsmustberealized.Previousattemptstocreateandcharacterizesuchdefectswerelimitedbecauseoffabricationchallenges.Herewereporttheopticalandstructuralcharacterizationofcomplexsubmicrometrefeaturesofunprecedentedqualitywithinsiliconinverseopals.High-resolutionthree-dimensionalf
4、eaturesarefirstformedwithinasilicacolloidalcrystalbymeansoftwo-photonpolymerization,followedbyahigh-indexreplicationstepandremovaloftheopaltemplatetoyieldembeddeddefectsinthree-dimensionalsiliconphotoniccrystals.Wedemonstratethecouplingofbandgapfrequenciestoresonantmodesinplanaropt
5、icalcavitiesandthefirstwaveguidingofnear-infraredlightaroundsharpbendsinacomplete-photonic-bandgapmaterial.Photoniccrystals(PhCs),ormaterialspossessingaperiodicmaterialthathasacPBG(ref.13).Inthisarticle,weintroducemodulationintheirdielectricconstant,havebeenproposedasdefectsofarbit
6、raryshapeandpositionwithinacPBGmaterialmediainwhichphotonscanbemanipulatedinasimilarfashionandopticallycharacterizethesefeatures.Lightisguidedaroundtoelectronsinsemiconductors.Specifically,PhCscanexhibitasharpbendsina3DPhC,demonstratingthefirstwaveguidingofcompletephotonicbandgap,or
7、arangeoffrequenciesoverwhichnear-infrared(NIR)lightwithinacPBGmaterial.Thisrepresentslightcannotpropagateinanydirectionwithinthemedium1–3.Theamajormilestoneintheuseof3DPhCsforcPBGapplications10.uniqueopticalpropertiesofcomplete-photonic-bandgap(cPBG)materialsprovidethebasisfornume
8、rousapplications,suchasRESULTSlow
