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1、UCRL-JRNL-215632Silicon-GermaniumFilmsDepositedbyLowFrequencyPECVD:EffectofH2andArDilutionA.Kosarev,A.Torres,Y.Hernandez,R.Ambrosio,C.Zuniga,T.E.Felter,R.R.Asomoza,Y.Kudriavtsev,R.Silva-Gonzalez,E.Gomez-Barojas,A.Ilinski,A.S.AbramovSeptember23,2005JournaloftheMaterialsResearchSocietyDisclaim
2、erThisdocumentwaspreparedasanaccountofworksponsoredbyanagencyoftheUnitedStatesGovernment.NeithertheUnitedStatesGovernmentnortheUniversityofCalifornianoranyoftheiremployees,makesanywarranty,expressorimplied,orassumesanylegalliabilityorresponsibilityfortheaccuracy,completeness,orusefulnessofan
3、yinformation,apparatus,product,orprocessdisclosed,orrepresentsthatitsusewouldnotinfringeprivatelyownedrights.Referencehereintoanyspecificcommercialproduct,process,orservicebytradename,trademark,manufacturer,orotherwise,doesnotnecessarilyconstituteorimplyitsendorsement,recommendation,orfavori
4、ngbytheUnitedStatesGovernmentortheUniversityofCalifornia.TheviewsandopinionsofauthorsexpressedhereindonotnecessarilystateorreflectthoseoftheUnitedStatesGovernmentortheUniversityofCalifornia,andshallnotbeusedforadvertisingorproductendorsementpurposes.1JMR-2004-0903acceptedtoJ.Mat.Res.Silicon-
5、GermaniumFilmsDepositedbyLowFrequencyPECVD:EffectofH2andArDilution1111123A.Kosarev,A.Torres,Y.Hernandez,R.Ambrosio,C.ZunigaT.E.Felter,R.Asomoza,34567Y.Kudriavtsev,R.Silva-Gonzalez,E.Gomez-Barojas,A.Ilinski,A.S.Abramov1InstituteNationalforAstrophysics,OpticsandElectronics,INAOE,Apdo.Postal.51
6、-216,CP7200,Puebla,Mexico2LawrenceLivermoreNationalLaboratory,Livermore,CA,94550,USA3CINVESTAV-IPN,Av.IPN#2508,Mexico,D.F.073604InstitutodeFisica,BenemeritaUniversidadAutonomadePuebla,Apdo.PostalJ-48,Puebla,Pue.,C.P.72570,Mexico5CIDS-IC,BenemeritaUniversidadAutonomadePuebla,Apdo.Postal1651,P
7、uebla,Pue.C.P.72000,Mexico67BenemeritaUniversidadAutonomadePuebla,Puebla,Puebla72050,MexicoA.F.IoffePhys.-TechnicalInstitute,St.-Petersburg,194021,RussiaAbstractWehavestudiedstructureandelectricalpropertiesofSi1-YGeY:HfilmsdepositedbylowfrequencyPE
