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1、J.Phys.Chem.CXXXX,xxx,000AEffectsofaTiO2BufferLayeronSolution-DepositedVO2Films:EnhancedOxidizationDurabilityZongtaoZhang,,YanfengGao,*,LitaoKang,,JingDu,,andHongjieLuoStateKeyLaboratoryofHighPerformanceCeramicsandSuperfineMicrostructure,ShanghaiInstituteofCerami
2、cs,ChineseAcademyofSciences(CAS),1295Dingxi,Changning,Shanghai200050,China,andGraduateUniVersityofChineseAcademyofSciences,19Yuquanlu,Beijing,100049,ChinaReceiVed:September4,2010;ReVisedManuscriptReceiVed:October24,2010Inthisarticle,thermochromicVO2filmsweredepos
3、itedonfusedquartzandrutileTiO2-bufferedfusedquartzsubstratesviaasolution-phaseprocess.TheincorporationofaTiO2bufferlayerenduresanenhancedoxidizationdurabilityofVO2filmsunderanenvironmentwithhighoxygenpartialpressures.Oxidizationinfurnaceduringacoolingstageandrapi
4、dthermaloxidization(RTO)treatmentswereemployedtoinvestigatetheevolutionofmicrostructuresandcompositionsofthefilmsinthegradualoxidizationprocesses.OxidizationtreatmentstransformedVO2intoV2O5forfilmsgrownonfusedquartzsubstrates,whereastheoxidationprocesswassignifican
5、tlyhinderedforfilmspreparedonaTiO2bufferlayer,especiallyaroundtheVO2/TiO2interface.Thephenomenonisfirstreportedinthisarticleandisimportantforpracticalapplications.Introductioninfrared(NIR)switchingefficiency.13,19Furthermore,thecappingtechniquemaybelimitedtosmartwi
6、ndowsandisnotavailableManytransitionmetaloxidesundergoinsulator(orsemicon-forsomeapplications,forexampleelectricaldevices,whichductor)tometal-phasetransitions,forexample,Ti2O3,VO,VO2,requiredirectcontactwithVO2films.Inthiscase,theenhance-andVO.1-4Amongthese,VOiso
7、neofthemostextensively232mentoftheoxidizationdurabilityofVO2filmsisrequisite.investigated.BulksinglecrystalVO2undergoesareversibleHowever,almostnoreportshavestudiedthisaspect.first-orderphasetransitionat∼340K,3,4whichisaccompaniedInthisarticle,weinvestigateasubstr
8、ate-derivedimprovementbyadistinctchangeinitsinfraredtransmittance.5Abovetheoftheoxidizationdurabilitybythepredepositionofathinrutilephasetransitiontemperature,ithasas
