欢迎来到天天文库
浏览记录
ID:34655574
大小:55.57 KB
页数:11页
时间:2019-03-08
《General Theory of Transport in Silicon- Germanium Alloys.pdf》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、TransportinSilicon-GermaniumHeterostructuresDanielChrastina3GeneralTheoryofTransportinSilicon-GermaniumAlloysIgnoringdopingforthemoment,therearetwowaysinwhichanalloylayermaybeincorporatedwithinaheterostructure.Inapseudomorphicstructure(suchasthatdescribedinFigure3.1)asilicon-germaniumalloyisg
2、rowndirectlyonpuresilicon.(Itisnormalpracticenottogrowthealloydirectlyontothesiliconsubstratebuttodepositafewhundrednanometresofpuresiliconfirst.)Thealloylayeristhengenerallycappedbymorepuresilicon(thereareissuesregardingtheoxidizationofa1silicon-germaniumalloy).Thealloylayerwillmatchitslatti
3、ceconstanttothatofthepuresilicon,provideditisnottoothick,thegermaniumconcentrationisnottoohigh,orthegrowthtemperatureisnottoohigh.Forthisreason,whilstpseudomorphicstructuresaregenerallysimpletogrow,theyaregenerallylimitedtolowgermaniumconcentrationsandthinalloylayers.Alternatively,toallowforg
4、reaterflexibilityregardingthickeralloyswithhighergermaniumconcentrationsorpuresiliconundertensilestrain(forelectronchannels,seeChapter6)avirtualsubstratemaybegrown.Abufferlayerofalloyisgrownandallowedtorelax,andthentheactivechannelsaregrownonthis.Thegermaniumconcentrationwithinthebuffermaybeg
5、radedtoincreaseupwards,butisgenerallyconstantforthefewhundrednanometresbelowtheactivechannel.Itisimportanttoensurethatthebufferlayerisfullyrelaxed(bygrowingitatahighenough2temperature)andthatthedefectsarenotmigratingupintotheactivechannel.3.1PrincipleAdvantagesInUsingASilicon-GermaniumHeteros
6、tructureTherearethreeprincipleadvantagestousingasilicon-germaniumheterostructureasopposedtoaplainsilicon-silicondioxide(Si/SiO2)system,arisingfromthelowereffectivemass,thepossibilityofband-structureengineering,andtheenergybandsplittinginstrainedlayers.7TransportinSilicon-GermaniumHeterostruct
7、uresDanielChrastinaFigure3.1Aschematicbandprofileofaninverted,pseudomorphicstructurewhichshowshowa2-dimensionalcarriergas(inthiscase,ofholes)isformed.Whenbroughttogether,dopantatomsionizeandchargeaccumulatesatthenearestheterointerface.8Transp
此文档下载收益归作者所有