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1、Int.J.Mol.Sci.2011,12,2200-2215;doi:10.3390/ijms12042200OPENACCESSInternationalJournalofMolecularSciencesISSN1422-0067www.mdpi.com/journal/ijmsArticleCharacterizationofDopedAmorphousSiliconThinFilmsthroughtheInvestigationofDopantElementsbyGlowDischargeSpectrometry.ACorrelationofConductivityandBandga
2、pEnergyMeasurements1,2,†3,†2,3PascalSánchez,OlayaLorenzo,ArmandoMenéndez*,JoseLuisMenéndez,211,DavidGomez,RosarioPereiroandBeatrizFernández*1DepartmentofPhysicalandAnalyticalChemistry,FacultyofChemistry,UniversityofOviedo,JulianClavería,833006Oviedo,Spain;E-Mails:pascal@itma.es(P.S.);mrpereiro@uniov
3、i.es(R.P.)2EnergyGroup(EN)-ITMAFoundation,Calafates11(L.3.4)33417Avilés,Spain;E-Mail:d.gomez@itma.es3DepartmentofNanostructuredMaterials,NanomaterialsandNanotechnologyResearchCenter(CINN),GovernmentofAsturias,SpanishCouncilforScientificResearch(CSIC),UniversityofOviedo(UO),TechnologyParkofAsturias,3
4、3428Llanera,Asturias,Spain;E-Mails:olayalc@gmail.com(O.L.);jl.menendez@cinn.es(J.L.M.)†Theseauthorscontributedequallytothiswork.*Authorstowhomcorrespondenceshouldbeaddressed;E-Mails:a.menendez@itma.es(A.M.);fernandezbeatriz@uniovi.es(B.F.);Tel.:+34-985-105365;Fax:+34-985-103125.Received:4February201
5、1;inrevisedform:15March2011/Accepted:28March2011/Published:30March2011Abstract:Thedeterminationofopticalparameters,suchasabsorptionandextinctioncoefficients,refractiveindexandthebandgapenergy,iscrucialtounderstandthebehaviorandfinalefficiencyofthinfilmsolarcellsbasedonhydrogenatedamorphoussilicon(a-
6、Si:H).Theinfluenceofsmallvariationsofthegasflowratesusedforthepreparationofthep-a-SiC:Hlayeronthebandgapenergy,aswellasonthedopantelementsconcentration,thicknessandconductivityofthep-layer,isinvestigatedinthisworkusingseveralcomplementarytechniques.UV-NIRspectrophotometryandellipsometrywereusedforth
7、edeterminationofbandgapenergiesoffourp-a-SiC:Hthinfilms,preparedbyusingdifferentB2H6andSiH4fluxes(B2H6from12sccmto20sccmandSiH4from6sccmto10sccm).Moreover,radiofrequencyglowdischargeopticalemissionspe