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1、PROGRESSINPHOTOVOLTAICS:RESEARCHANDAPPLICATIONSProg.Photovolt:Res.Appl.2004;12:113142(DOI:10.1002/pip.533)SpecialIssueThin-filmSiliconSolarCellTechnology1,y2311,41,41A.V.Shah*,H.Schade,M.Vanecek,J.Meier,E.Vallat-Sauvain,N.Wyrsch,U.Kroll,11C.DrozandJ.Bailat1InstituteofMicr
2、otechnology(IMT)UniversityofNeuchatel,CH-2000Neuchatel,Switzerland2RWESchottSolarGmbH,Phototronics,D-85640Putzbrunn,Germany3InstituteofPhysics,AcademyofSciences,Cukrovarnicka10,Prague6,CzechRepublic4UnaxisSPTecS.A.PuitsGodet12a,CH-2000Neuchatel,SwitzerlandThispaperdescri
3、bestheuse,withinp–i–n-andn–i–p-typesolarcells,ofhydro-genatedamorphoussilicon(a-Si:H)andhydrogenatedmicrocrystallinesilicon(c-Si:H)thinfilms(layers),bothdepositedatlowtemperatures(200C)byplasma-assistedchemicalvapourdeposition(PECVD),fromamixtureofsilaneandhydrogen.Opti
4、calandelectricalpropertiesofthei-layersaredescribed.Thesepropertiesarelinkedtothemicrostructureandhencetothei-layerdepositionrate,thatinturn,affectsthroughputinproduction.Theimportanceofcontactandreflec-tionlayersinachievinglowelectricalandopticallossesisexplained,particu
5、larlyforthesuperstratecase.Especiallytherequiredpropertiesforthetransparentconductiveoxide(TCO)needtobewellbalancedinordertoprovide,atthesametime,forhighelectricalconductivity(preferablybyhighelectronmobility),lowopticalabsorptionandsurfacetexture(forlowopticallossesandp
6、ronouncedlighttrapping).Single-junctionamorphousandmicrocrystallinep–i–n-typesolarcells,asfabricatedsofar,arecomparedintheirkeyparameters(Jsc,FF,Voc)withthe‘theoretical’limitingvalues.Tandemandmultijunctioncellsareintroduced;thec-Si:H/a-Si:Hor‘micromorph’tandemsolarcell
7、conceptisexplainedindetail,andrecentresultsobtainedherearelistedandcommented.Factorsgoverningthemass-productionofthin-filmsiliconmodulesaredeterminedbothbyinherenttechnicalreasons,describedindetail,andbyeconomicconsiderations.Thecumulativeeffectofthesefactorsresultsindist
8、inctefficiencyreductionsfromvaluesofrecordlaboratorycellstostatisticalaveragesofproductionmodules.Finall
