Synthesis and Characterization of Indium Niobium Oxide Thin Films via Sol-Gel Spin Coating Method

《Synthesis and Characterization of Indium Niobium Oxide Thin Films via Sol-Gel Spin Coating Method》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。

1、AvailableonlineatSciVerseScienceDirectJ.Mater.Sci.Technol.,2013,29(10),923e928SynthesisandCharacterizationofIndiumNiobiumOxideThinFilmsviaSoleGelSpinCoatingMethod1)1)*1,2)SaeedMohammadi,MohammadRezaGolobostanfard,HosseinAbdizadeh1)SchoolofMetallurgyandMaterialsEngi

2、neering,CollegeofEngineering,UniversityofTehran,P.O.Box11155-4563,Tehran,Iran2)CenterofExcellenceforHighPerformanceMaterials,UniversityofTehran,P.O.Box11155-4563,Tehran,Iran[ManuscriptreceivedJanuary29,2013,inrevisedformMay1,2013,Availableonline28June2013]Inthepres

3、entstudy,niobium-dopedindiumoxidethinfilmswerepreparedbysolegelspincoatingtechnique.TheeffectsofdifferentNb-dopingcontentsonstructural,morphological,optical,andelectricalpropertiesofthefilmswerecharacterizedbymeansofX-raydiffraction(XRD),fieldemissionscanningelectr

4、onmicroscopy(FESEM),atomicforcemicroscopy(AFM),UVeVisspectroscopy,andfourpointprobemethods.XRDanalysisconfirmedtheformationofcubicbixbyitestructureofIn2O3withasmallshiftinmajorpeakpositiontowardlowerangleswithadditionofNb.FESEMmicrographsshowthatgrainsizedecreasedw

5、ithincreasingtheNb-dopingcontent.Opticalandelectricalstudiesrevealedthatoptimumopto-electronicproperties,includingminimumelectrical3resistivityof119.410Ucmandanaverageopticaltransmittanceof85%inthevisibleregionwithabandgapof3.37eVwereachievedforthefilmsdopedwithN

6、b-dopingcontentof3at.%.AFMstudiesshowthatadditionofNbatoptimumcontentleadstotheformationofcompactfilmswithsmoothsurfaceandlessaverageroughnesscomparedwiththepreparedIn2O3films.KEYWORDS:Indiumoxide;Nb-doping;Solegelspincoating;Transparentconductiveoxide;Opto-electro

7、nicproperties1.Introductionwiththepreparationparameterssuchasannealingtemperatureand[10]thicknessofthefilms.Transparentconductiveoxide(TCOs)thinfilmswithlowre-Inthisregard,differenttypesofimpurities,includingtin[11][12][13][14]sistivityandhightransmissionareextensive

8、lyusedbecauseof(Sn),gallium(Ga),copper(Cu),zirconium(Zr),[1]zinc(Zn)[15],titanium(Ti)[16],tungsten(W)[17,18],molybdenumtheirapplicationsindyesynt