Amorphous indium zinc oxide thin film transistors with PVP gate dielectric layers-my paper.pdf

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1、HomeSearchCollectionsJournalsAboutContactusMyIOPscienceAmorphousindiumzincoxidethinfilmtransistorswithpoly-4-vinylphenolgatedielectriclayersThisarticlehasbeendownloadedfromIOPscience.Pleasescrolldowntoseethefulltextarticle.2011Semicond.Sci.Technol.26095004(

2、http://iopscience.iop.org/0268-1242/26/9/095004)Viewthetableofcontentsforthisissue,orgotothejournalhomepageformoreDownloaddetails:IPAddress:202.120.224.18Thearticlewasdownloadedon23/11/2011at07:26Pleasenotethattermsandconditionsapply.IOPPUBLISHINGSEMICONDUC

3、TORSCIENCEANDTECHNOLOGYSemicond.Sci.Technol.26(2011)095004(5pp)doi:10.1088/0268-1242/26/9/095004Amorphousindiumzincoxidethinfilmtransistorswithpoly-4-vinylphenolgatedielectriclayersHaifengPu,GuifengLi,JiahanFeng,BaoyingLiuandQunZhang1DepartmentofMaterialsSci

4、ence,FudanUniversity,Shanghai200433,PeoplesRepublicofChinaE-mail:zhangqun@fudan.edu.cnReceived12April2011,infinalform16May2011Published6July2011Onlineatstacks.iop.org/SST/26/095004AbstractThinfilmtransistors(TFTs)withamorphousindiumzincoxide(a-IZO)aschannella

5、yersandpoly-4-vinylphenolasdielectriclayerswerefabricated.Transmissioncurvesshowthatthedouble-layerstructureofthea-IZOlayerandthepoly-4-vinylphenollayerexhibitstheantireflectioneffect.Itwasfoundthatpostheat-treatmentatrelativelylowtemperaturewillimprovetheel

6、ectricalperformanceofthetransistors.TFTdeviceswithsaturationmobilityof25.4cm2V−1s−1,thresholdvoltageof4.0V,subthresholdswingvalueof0.88V/decadeandcurrenton/offratioof106wereobtained.(Somefiguresinthisarticleareincolouronlyintheelectronicversion)1.Introductio

7、nInorganicthinfilmssuchasSiO2[9,12],Al2O3[7],Si4N3[8],andATOx[4,5,13]areusuallyutilizedastheAmorphousoxidesemiconductorthinfilmtransistors(AOS-dielectriclayersduetotheirgoodperformanceandmatureTFTs)haveattractedconsiderableattentionfortheirpotentialprocess.Ne

8、vertheless,organicdielectriclayersshowingapplicationsinflatpaneldisplay(FPD)andflexibleelectronicsgoodinsulatingpropertyalsoattractattentionfortheirlow-becauseoftheirhighfield-effectmobilityandlowtemperat