integrated circuits 专业科技英语论文

integrated circuits 专业科技英语论文

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时间:2017-12-14

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1、集成电路课程论文报告院系物理与电子信息工程学院专业电子信息工程班级11电工学生姓名学号任课教师2013年12月26日IntegratedCircuitsAbstract:CMOSICsincorporatebothNMOSandPMOStransistors,Anapplication-specificintegratedcircuit(ASIC)isanintegratedcircuit(IC)customizedforaparticularuse,ratherthanintendedforgeneral-purposeuse.Keywords:Circuits;Integr

2、ated;application-specific;1IntroductionDigitallogicandelectroniccircuitsderivetheirfunctionalityfromelectronicswitchescalledtransistor.Roughlyspeaking,thetransistorcanbelikenedtoanelectronicallycontrolledvalvewherebyenergyappliedtooneconnectionofthevalveenablesenergytoflowbetweentwootherconn

3、ections.Bycombiningmultipletransistors,digitallogicbuildingblockssuchasANDgatesandflip-flopsareformed.Transistors,inturn,aremadefromsemiconductors.Consultaperiodictableofelementsinacollegechemistrytextbook,andyouwilllocatesemiconductorsasagroupofelementsseparatingthemetalsandnonmetals.Theyar

4、ecalledsemiconductorsbecauseoftheirabilitytobehaveasbothmetalsandnonmetals.Asemiconductorcanbemadetoconductelectricitylikeametalortoinsulateasanonmetaldoes.Thesedifferingelectricalpropertiescanbeaccuratelycontrolledbymixingthesemiconductorwithsmallamountsofotherelements.Thismixingiscalleddop

5、ing.Asemiconductorcanbedopedtocontainmoreelectrons(N-type)orfewerelectrons(P-type).Examplesofcommonlyusedsemiconductorsaresiliconandgermanium.PhosphorousandboronaretwoelementsthatareusedtodopeN-typeandP-typesilicon,respectively.2MaterialsandMethodsAtransistorisconstructedbycreatingasandwicho

6、fdifferentlydopedsemiconductorlayers.Thetwomostcommontypesoftransistors,thebipolar-junctiontransistor(BJT)andthefield-effecttransistor(FET)areschematicallyillustrated.Thisfigureshowsboththesiliconstructuresoftheseelementsandtheirgraphicalsymbolicrepresentationaswouldbeseeninacircuitdiagram.T

7、heBJTshownisanNPNtransistor,becauseitiscomposedofasandwichofN-P-Ndopedsilicon.Whenasmallcurrentisinjectedintothebaseterminal,alargercurrentisenabledtoflowfromthecollectortotheemitter.TheFETshownisanN-channelFET,whichiscomposedoftwoN-typeregionssepa

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