Springer.Millimeter.wave.Integrated.Circuits.Springer.eBook.YYePG

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1、Millimeter-WaveIntegratedCircuitsThispageintentionallyleftblankEoinCareySverreLidholmMillimeter-WaveIntegratedCircuitsSpringereBookISBN:0-387-23666-XPrintISBN:0-387-23665-1©2005SpringerScience+BusinessMedia,Inc.Print©2005SpringerScience+BusinessMedia,Inc.BostonAllrightsreservedNopartofthiseBook

2、maybereproducedortransmittedinanyformorbyanymeans,electronic,mechanical,recording,orotherwise,withoutwrittenconsentfromthePublisherCreatedintheUnitedStatesofAmericaVisitSpringer'seBookstoreat:http://ebooks.kluweronline.comandtheSpringerGlobalWebsiteOnlineat:http://www.springeronline.comDedicati

3、onToourwives,AileenandPhil.ThispageintentionallyleftblankContentsDedicationvPrefacexiiiAcknowledgmentsxv1.AnIntroductiontomm-WaveIntegratedCircuits11.1Introduction11.2Motivationformm-Waves11.3MotivationforMonolithicGaAsIntegratedCircuits21.4MotivationforImprovedFundamentalCircuitUnderstanding31

4、.5KeyComponents31.6StructureofthisWork42.HighFrequencyMaterialsandTechnology72.1Introduction72.2ElectricalCharacteristicsofIdealHigh-FrequencySemiconductorMaterial8viiiMillimeter-WaveIntegratedCircuits2.3ElectricalCharacteristicsofRealHighFrequencyMaterials92.3.1GalliumArsenide(GaAs)102.3.2GaAs

5、/SiComparison102.3.3InP152.3.4OtherIII-VCompoundSemiconductors162.3.5InGaAs172.4III-VCompoundSemiconductorFabricationTechniques182.5GaAsFabricationTechnology192.5.1CrystalGrowth192.5.2Epitaxy202.5.3IonImplantation222.5.4GaAsDopants242.5.5SchottkyandOhmicContacts242.6ConsiderationsfortheRealisat

6、ionofEffectiveMonolithicmm-WaveCircuitLayouts262.6.1SchematicOptimisationConsistentwithGoodmm-WaveLayoutPractice262.6.2ConsiderationofFoundryElementLimitations272.6.3ProbingConsiderations272.6.4Dicing/SawingConsiderations292.6.5PackagingImpactonPerformance302.7FutureTrends303.HighFrequencyDevic

7、es333.1Introduction333.2HighFrequencyDevices343.2.1Background343.2.2SchottkyDiode353.2.3MESFET463.2.4ModernFETVariants533.2.5FETEquivalentCircuit623.2.6FundamentalFETCircuitRelationships643.2.7GaAsHetero-JunctionBipolarTransistor6