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ID:5483409
大小:143.00 KB
页数:6页
时间:2017-12-14
《integrated circuits 专业科技英语论文》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、集成电路课程论文报告院系物理与电子信息工程学院专业电子信息工程班级11电工学生姓名学号任课教师2013年12月26日IntegratedCircuitsAbstract:CMOSICsincorporatebothNMOSandPMOStransistors,Anapplication-specificintegratedcircuit(ASIC)isanintegratedcircuit(IC)customizedforaparticularuse,ratherthanintendedforgeneral-purposeuse.Keywords:Circuits;Integr
2、ated;application-specific;1IntroductionDigitallogicandelectroniccircuitsderivetheirfunctionalityfromelectronicswitchescalledtransistor.Roughlyspeaking,thetransistorcanbelikenedtoanelectronicallycontrolledvalvewherebyenergyappliedtooneconnectionofthevalveenablesenergytoflowbetweentwootherconn
3、ections.Bycombiningmultipletransistors,digitallogicbuildingblockssuchasANDgatesandflip-flopsareformed.Transistors,inturn,aremadefromsemiconductors.Consultaperiodictableofelementsinacollegechemistrytextbook,andyouwilllocatesemiconductorsasagroupofelementsseparatingthemetalsandnonmetals.Theyar
4、ecalledsemiconductorsbecauseoftheirabilitytobehaveasbothmetalsandnonmetals.Asemiconductorcanbemadetoconductelectricitylikeametalortoinsulateasanonmetaldoes.Thesedifferingelectricalpropertiescanbeaccuratelycontrolledbymixingthesemiconductorwithsmallamountsofotherelements.Thismixingiscalleddop
5、ing.Asemiconductorcanbedopedtocontainmoreelectrons(N-type)orfewerelectrons(P-type).Examplesofcommonlyusedsemiconductorsaresiliconandgermanium.PhosphorousandboronaretwoelementsthatareusedtodopeN-typeandP-typesilicon,respectively.2MaterialsandMethodsAtransistorisconstructedbycreatingasandwicho
6、fdifferentlydopedsemiconductorlayers.Thetwomostcommontypesoftransistors,thebipolar-junctiontransistor(BJT)andthefield-effecttransistor(FET)areschematicallyillustrated.Thisfigureshowsboththesiliconstructuresoftheseelementsandtheirgraphicalsymbolicrepresentationaswouldbeseeninacircuitdiagram.T
7、heBJTshownisanNPNtransistor,becauseitiscomposedofasandwichofN-P-Ndopedsilicon.Whenasmallcurrentisinjectedintothebaseterminal,alargercurrentisenabledtoflowfromthecollectortotheemitter.TheFETshownisanN-channelFET,whichiscomposedoftwoN-typeregionssepa
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