Integrated Circuits 专业科技英语论文

Integrated Circuits 专业科技英语论文

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1、集成电路课程论文报告院系物理与电子信息工程学院专业电子信息工程班级11电工学生姓名学号任课教师2013年12月26日IntegratedCircuitsAbstract:CMOSICsincorporatebothNMOSandPMOStransistors,Anapplication-specificintegratedcircuit(ASIC)isanintegratedcircuit(IC)customizedforaparticularuse,ratherthanintendedforgeneral-purpo

2、seuse.Keywords:Circuits;Integrated;application-specific;1IntroductionDigitallogicandelectroniccircuitsderivetheirfunctionalityfromelectronicswitchescalledtransistor.Roughlyspeaking,thetransistorcanbelikenedtoanelectronicallycontrolledvalvewherebyenergyappliedtoo

3、neconnectionofthevalveenablesenergytoflowbetweentwootherconnections.Bycombiningmultipletransistors,digitallogicbuildingblockssuchasANDgatesandflip-flopsareformed.Transistors,inturn,aremadefromsemiconductors.Consultaperiodictableofelementsinacollegechemistrytextb

4、ook,andyouwilllocatesemiconductorsasagroupofelementsseparatingthemetalsandnonmetals.Theyarecalledsemiconductorsbecauseoftheirabilitytobehaveasbothmetalsandnonmetals.Asemiconductorcanbemadetoconductelectricitylikeametalortoinsulateasanonmetaldoes.Thesedifferingel

5、ectricalpropertiescanbeaccuratelycontrolledbymixingthesemiconductorwithsmallamountsofotherelements.Thismixingiscalleddoping.Asemiconductorcanbedopedtocontainmoreelectrons(N-type)orfewerelectrons(P-type).Examplesofcommonlyusedsemiconductorsaresiliconandgermanium.

6、PhosphorousandboronaretwoelementsthatareusedtodopeN-typeandP-typesilicon,respectively.2MaterialsandMethodsAtransistorisconstructedbycreatingasandwichofdifferentlydopedsemiconductorlayers.Thetwomostcommontypesoftransistors,thebipolar-junctiontransistor(BJT)andthe

7、field-effecttransistor(FET)areschematicallyillustrated.Thisfigureshowsboththesiliconstructuresoftheseelementsandtheirgraphicalsymbolicrepresentationaswouldbeseeninacircuitdiagram.TheBJTshownisanNPNtransistor,becauseitiscomposedofasandwichofN-P-Ndopedsilicon.When

8、asmallcurrentisinjectedintothebaseterminal,alargercurrentisenabledtoflowfromthecollectortotheemitter.TheFETshownisanN-channelFET,whichiscomposedoftwoN-typeregionssepa

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