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1、Chapter2BasicMOSDevicePhysicsInstudyingthedesignofintegratedcircuits,oneoftwoextremeapproachescanbetaken:(1)beginwithquantummechanicsandunderstandsolid-statephysics,semiconductordevicephysics,devicemodeling,andfinallythedesignofcircuits;(2)treateachsemiconductordeviceasablackboxwhosebehaviori
2、sdescribedintermsofitsterminalvoltagesandcurrentsanddesigncircuitswithlittleattentiontotheinternaloperationofthedevice.Experienceshowsthatneitherapproachisoptimum.Inthefirstcase,thereadercannotseetherelevanceofallofthephysicstodesigningcircuits,andinthesecond,he/sheisconstantlymystifiedbythec
3、ontentsoftheblackbox.Intoday'sICindustry,asolidunderstandingofsemiconductordevicesisessential,moresoinanalogdesignthanindigitaldesignbecauseintheformer,transistorsarenotconsideredassimpleswitchesandmanyoftheirsecond-ordereffectsdirectlyim-pacttheperformance.Furthermore,aseachnewgenerationofIC
4、technologiesscalesthedevices,theseeffectsbecomemoresignificant.Sincethedesignermustoftendecidewhicheffectscanbeneglectedinagivencircuit,insightintodeviceoperationprovesinvaluable.Inthischapter,westudythephysicsofMOSFETsatanelementarylevel,coveringthebareminimumthatisnecessaryforbasicanalogdes
5、ign.TheultimategoaIisstilltodevelopacircuitmodelforeachdevicebyformulatingitsoperation,butthisisac-complishedwithagoodunderstandingoftheunderlyingprinciples.AfterstudyingmanyanalogcircuitsinChapters3through13andgainingmotivationforadeeperunderstandingofdevices,wereturntothesubjectinChapter16a
6、nddealwithotheraspectsofMOSoperation.WebeginourstudywiththestructureofMOStransistorsandderivetheirWchar-acteristics.Next,wedescribesecond-ordereffectssuchasbodyeffect,channel-lengthmodulation,andsubthresholdconduction.WethenidentifytheparasiticcapacitancesofMOSFETs,deriveasmall-signalmodel,an
7、dpresentasimpleSPICEmodel.Weas-sumethatthereaderisfamiliarwithsuchbasicconceptsasdoping,mobility,andpnjunctions.
