Properties of epitaxial, (001)- and (110)-oriented (PbMg1_3Nb2_3O3)2_3-(PbTiO3)1_3 films on silicon described by polarization rotation英文资料

Properties of epitaxial, (001)- and (110)-oriented (PbMg1_3Nb2_3O3)2_3-(PbTiO3)1_3 films on silicon described by polarization rotation英文资料

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时间:2019-08-08

Properties of epitaxial, (001)- and (110)-oriented (PbMg1_3Nb2_3O3)2_3-(PbTiO3)1_3 films on silicon described by polarization rotation英文资料_第1页
Properties of epitaxial, (001)- and (110)-oriented (PbMg1_3Nb2_3O3)2_3-(PbTiO3)1_3 films on silicon described by polarization rotation英文资料_第2页
Properties of epitaxial, (001)- and (110)-oriented (PbMg1_3Nb2_3O3)2_3-(PbTiO3)1_3 films on silicon described by polarization rotation英文资料_第3页
Properties of epitaxial, (001)- and (110)-oriented (PbMg1_3Nb2_3O3)2_3-(PbTiO3)1_3 films on silicon described by polarization rotation英文资料_第4页
Properties of epitaxial, (001)- and (110)-oriented (PbMg1_3Nb2_3O3)2_3-(PbTiO3)1_3 films on silicon described by polarization rotation英文资料_第5页
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1、ScienceandTechnologyofAdvancedMaterialsISSN:1468-6996(Print)1878-5514(Online)Journalhomepage:http://www.tandfonline.com/loi/tsta20Propertiesofepitaxial,(001)-and(110)-oriented(PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3filmsonsilicondescribedbypolarizationrotationMuhammadBoota

2、,EvertP.Houwman,MatthijnDekkers,MinhD.Nguyen,KurtH.Vergeer,GiuliaLanzara,GertjanKoster&GuusRijndersTocitethisarticle:MuhammadBoota,EvertP.Houwman,MatthijnDekkers,MinhD.Nguyen,KurtH.Vergeer,GiuliaLanzara,GertjanKoster&GuusRijnders(2016)Propertiesofepitaxial,(001)-a

3、nd(110)-oriented(PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3filmsonsilicondescribedbypolarizationrotation,ScienceandTechnologyofAdvancedMaterials,17:1,45-57,DOI:10.1080/14686996.2016.1140306Tolinktothisarticle:https://doi.org/10.1080/14686996.2016.1140306©2016TheAuthor(s).Publ

4、ishedbyNationalInstituteforMaterialsScienceinpartnershipwithTaylor&FrancisPublishedonline:09Mar2016.SubmityourarticletothisjournalArticleviews:641ViewCrossmarkdataCitingarticles:2ViewcitingarticlesFullTerms&Conditionsofaccessandusecanbefoundathttp://www.tandfonlin

5、e.com/action/journalInformation?journalCode=tsta20ScienceandTechnologyofadvancedMaTerialS,2016vol.17,no.1,45–57http://dx.doi.org/10.1080/14686996.2016.1140306OPENACCESSPropertiesofepitaxial,(001)-and(110)-oriented(PbMgNbO)-(PbTiO)1/32/332/331/3filmsonsilicondescri

6、bedbypolarizationrotationMuhammadBootaa,b,EvertP.Houwmana,MatthijnDekkersc,MinhD.Nguyena,c,KurtH.Vergeera,GiuliaLanzarab,GertjanKosteraandGuusRijndersaafacultyofScienceandTechnology,MeSa+institutefornanotechnology,UniversityofTwente,P.o.Box217,7500aeenschede,thene

7、therlandsbengineeringdepartment,Universityofrome“roMaTre”,viadellavascanavale79,00146rome,italycSolMatesBv,drienerlolaan5,Building6,7522nBenschede,thenetherlandsABSTRACTARTICLEHISTORYEpitaxial(PbMgNbO)-(PbTiO)(PMN-PT)filmswithdifferentout-of-planeorientationsrecei

8、ved24September20151/32/332/331/3werepreparedusingaCeO/yttriastabilizedZrObilayerbufferandsymmetricSrRuOelectrodesrevised2december2015223onsiliconsubstra

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