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1、JournalofCrystalGrowth198/199(1999)390Ð398BulkpropertiesofverylargediametersiliconsinglecrystalsW.vonAmmon*,E.Dornberger,P.O.HanssonWackerSiltronicAG,P.O.1140,D-84479Burghausen,GermanyAbstractIthasbeenexperimentallyfoundthatitwillbedi¦culttogrow300mmorlargerdiametercrystalswithsimilar
2、qualityasfor200mmorsmallerdiametercrystals.ThisphenomenoncanbeunderstoodwithintheframeoftheVoronkovtheoryinwhichthevalueoftheparameter»/G(»"pullrate,G"temperaturegradientatthegrowthinterface)determineswhichtypeofdefectformsinthegrowingcrystal.Duetofundamentaltechnologicalconstraints,t
3、hepullrateofsiliconsinglecrystalshastobereducedasthediameterincreases.Forcrystaldiametersbeyond300mm,thereductionofpullrateissolarge,that»/G(r)(r"radialposition)canprobablynolongerbekeptabovethecriticalvalueC"1.34]10~3cm2K~1min~1overtheentirecrystalvolumebythepresentgrowthtechnology.A
4、saresult,the#3*5defectbehaviorofthesiliconbulkchanges.TheaggregationofdefectsisnowdominatedbyexcessSiinterstitialsinsteadofvacanciesand,hence,L-pits(dislocationloops)areobservedinsteadofmicrovoids.UnlessnewmethodsforthesuppressionofL-pitscanbedeveloped,thiswillseriouslychallengetheuse
5、ofpolishedwafersinverylargediameterdevicemanufacturinglines,asL-pitscanseverelydamagethedeviceperformance.Apromisingsolutiontothedefectproblemappearstobep#p!epiwafers.(1999ElsevierScienceB.V.Allrightsreserved.Keywords:Silicon;Crystal;Czochralski;Defects;Largediameter1.Introductioncrea
6、seinarea[2].However,belowacertainnum-berofchipsperwafer,theproductioncostsriseWitheverynewgenerationofsemiconductorde-dramaticallyandthedeviceindustryisforcedtovices,thecomplexityandfunctionalityofthedevi-changeovertothenextlargerwaferdiameter.Cur-cesincreasesand,hence,moretransistors
7、perchiprently,thetransitionfrom200to300mmwafersisaretobeintegrated[1].Asthenumberoftransis-preparedand300mmwafersareexpectedtobetorsperchipgrowsfasterthanthechipareacanbemanufacturedinlargescalein3Ð4years.InJapan,decreasedbysmallerdesignrules,thedevicesin-aresearchprogramhasbeenlaunch
8、edtoa
