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1、DevelopingnewmanufacturingmethodsfortheimprovementofAlF3thinfilmsCheng-ChungLee,Bo-HueiLiao,andMing-ChungLiuDepartmentofOpticsandPhotonics/ThinFilmTechnologyCenter,NationalCentralUniversity320,TaiwanE-mail:cclee@dop.ncu.edu.twAbstract:Inthisresearch,theplasmaetchingm
2、echanismwhichisappliedtodepositAlF3thinfilmshasbeendiscussedindetail.DifferentratiosofO2gaswereinjectedinthesputteringprocessandthentheopticalpropertiesandmicrostructureofthethinfilmswereexamined.ThebestopticalqualityandsmallestsurfaceroughnesswasobtainedwhentheAlF3t
3、hinfilmswerecoatedwithO2:CF4(12sccm:60sccm)at30Wsputteringpower.Toincreasethedepositionrateforindustrialapplication,thesputteringpowerwasincreasedto200WwiththebestratioofO2/CF4gas.Theresultsshowthatthedepositionrateat200Wsputteringpowerwas7.43timesfasterthanthatat30W
4、sputteringpowerandtheextinction-4coefficientsdepositedat200Warelessthan6.8×10atthewavelengthrangefrom190nmto700nm.TocomparethedepositionwithonlyCF4gasat200Wsputteringpower,theextinctioncoefficientofthethinfilms-3-4improvefrom4.4×10to6×10atthewavelengthof193nm.Inaddit
5、ion,thestructureofthefilmdepositedat200Wwasamorphous-likewithasurfaceroughnessof0.8nm.©2008OpticalSocietyofAmericaOCIScodes:(310.1860)DepositionandFabrication;(310.1620)Coatings._________________________________________________________________________________________
6、____Referencesandlinks1.C.C.Lee,M.C.Liu,M.Kaneko,K.Nakahira,andY.Takano,“CharacterizationofAlF3thinfilmsat193nmbythermalevaporation,”Appl.Opt.44,7333-7338(2005).2.S.Niisaka,T.Saito,J.Saito,A.Tanaka,A.Matsumoto,M.Otani,R.Biro,C.Ouchi,M.Hasegawa,Y.Suzuki,andK.Sone,“Dev
7、elopmentofopticalcoatingsfor157-nmlithographyIcoatingmaterials,”Appl.Opt.41,3242-3247(2002).3.O.R.WoodII,H.G.Craighead,J.E.Sweeney,andP.J.Maloney,“Vacuumultravioletlossinmagnesiumfluoridefilms,”Appl.Opt.23,3644-3649(1984).4.F.Rainer,W.H.Lowdermilk,D.Milam,C.K.Carnigl
8、ia,TTuttleHart,andT.L.Lichtenstein,“Materialsforopticalcoatingsintheultraviolet,”Appl.Opt.24,496-500(1985).5.Y.Taki,“Filmstructurea
