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1、IEEETRANSACTIONSONCOMPONENTSANDPACKAGINGTECHNOLOGIES,VOL.25,NO.4,DECEMBER2002677AdditionalJournalPapers:ieeexplore.ieee.org/WireBondingtoAdvancedCopper,Low-KIntegratedCircuits,theMetal/DielectricStacks,andMaterialsConsiderationsGeorgeG.Harman,Fellow,IEEE,andChristianE.JohnsonSupplementtoSan
2、taClaraValleyChapter,CPMT,EveningTalk,Sept2003:www.cpmt.org/scv/Abstract—Therearethreeareastoconsiderwhendesigning/im-dressed.ThelatterincorporatestheknowledgeobtainedfromplementingwirebondingtoadvancedULSIdamascene–copperthepastonbondingtomultichipmodules,wherebondpadsarechipshavingcopperm
3、etallizationandlowdielectric-constantoftenlocatedoverlowmoduluspolymers.Cu/LoKchipsandpolymersembeddedbeneaththem(Cu/LoK).Theseare:multichipmodules(MCMs)arepartofthesameproblemand1)thecopper-padtop-surfaceoxidationinhibitorcoating-metal/organic/inorganic.(Currentworkinvolvesevaluatingsharet
4、hesamegeneralsolutions.However,somespecialcondi-themetalandinorganicoptions);tionsexistforbondingtoCu/LoKstructures.2)thelowdielectricconstantmaterialsavailable;Wirebondstosemiconductordeviceshavetraditionallybeen3)under-padmetal/polymerstacksandsupportstructuresnec-madetoaluminumpadsoversi
5、liconorsilicondioxide,whichessaryforbondabilityandreliability.presentedbothanidealmetallurgyandarigidplatformforther-Therearealsovariouspolymer/metallurgicalinteractions,mosonicbonding.However,currently,copperpadscanbelo-resultinginlongtermpackaged-devicereliabilityproblems,thatcanoccurasth
6、eresultofthewirebondingprocessoverlowcatedoverlowmoduluspolymersthatarethemselvesencasedinmodulus,LoKmaterialswithbarriers.Theseincludecrackedbrittlediffusionbarrierswhichcancrackduringbonding.Thisdiffusionbarriers,copperdiffusionintotheLoKpolymers,canresultinbondyieldand/orreliabilityprobl
7、ems.Therefore,itcracking/spalling/crazingoftheLoKmaterials,andbondpadhasbecomenecessaryforwirebonding(ametallurgicalweldingindentation(“cupping”).Low-Kpolymermaterials,withhighexpansioncoefficientsandlowthermalconductivities,canalsoprocess)toincludethema
