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1、Whyopticallithographywillliveforevera)TimothyA.BrunnerIBMSRDC,2070Route52,HopewellJunction,NewYork12533~Received26June2003;accepted25August2003;published4December2003!Alithographicprocesscapableofmanufacturingstateoftheartchipsfacesmanydif®cultchallenges.Notonlymusttheprocessresolveth
2、eminimumfeaturesizebutoverlayerrorsmustbeheldtotighttolerances,exquisitelycomplexpatternsmustbeprintedwithhighyield,andtheoverallcostoftheprocessmustbeacceptable.Achievingacceptablechipcostusinganexpensiveexposuretoolisstronglylinkedtohighthroughput,andthisinturnislinkedtoresistproces
3、seswithhighsensitivity.Inrecentyears,chemicallyampli®edresistprocesseshavedominatedstate-of-the-artproductionbecauseoftheirhighresolutionandexcellentsensitivity.Thisarticlewillconsiderlimitationsofresolutionforproductionlithography,boththeresolutionlimitsoftheexposuretoolitselfandther
4、esolutionlimitsoftheresistprocess.Amongthemostimportantconsiderationsforproductionprocessesisthetradeoffbetweenresistprocesssensitivityandresolution.Fundamentalreasonsunderlyingthesuccessofopticallithographyformanufacturingintegratedcircuitswillbedescribed.Theseconsiderationswillillum
5、inatethechallengesandopportunitiesforfuturelithographicmethods.©2003AmericanVacuumSociety.@DOI:10.1116/1.1619954#I.INTRODUCTIONinformation,asillustratedinFig.2,beginningwiththepat-terndesignintheformofamaskdata®leandendingupasOvertheyearsmanylithographicpatterningmethodsaphysicallypat
6、terneddevicelayer.Eachstepinthelitho-havebeendevised.AlmosteverytypeofexposureenergyÐgraphicprocessholdsthepossibilityoflosinginformation,photonsofvariouswavelengthorparticlebeamsÐhasbeentherebydegradingthedesiredpattern.Thisarticlewillfocuscombinedwithinnovativecontact,proximity,orpr
7、ojectionontwomajorpartsoftheprocess:theprojectionofthepat-methods.Therearemyriadapplicationsforsuchpatterningternenergypro®leandtheresistprocess.SectionIIwillintheresearch,development,andmanufactureofelectronic,discusstheresolutionlimitsofproductionexposuretools,photonic,andopticaldev
8、ices.
