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1、OpticalandInterferometricLithography—NanotechnologyEnablersS.R.J.BRUECK,FELLOW,IEEEInvitedPaperInterferometriclithography(IL),theinterferenceofasmallandchemistrythatbecomeaccessibleatthenanoscaleandnumberofcoherentopticalbeams,isapowerfultechniquefor
2、thebecauseoftheaccompanyingpotentialfornewproductsandfabricationofawidearrayofsamplesofinterestfornanoscienceprocessesthatwillhaveamajorimpactontheworld’stech-andnanotechnology.ThetechniquesandlimitsofILarediscussednologicalfuture.Thenewscienceinvolv
3、esboththeincreasedwithparticularattentiontothesmallestscalesachievable.Withimmersiontechniques,thesmallestpatternsizeforasingleex-importanceofsurfaces(e.g.,increasedsurface/volumeratio)posureisahalf-pitchof=4nwhereistheopticalwavelengthandofthechem
4、ical/stericeffectsthatarethebasisofmuchandnistherefractiveindexoftheimmersionmaterial.Currentlyofmolecularbiology,aswellasthequantumphenomenawitha193-nmexcimerlasersourceandH2Oimmersion,thisthatbecomedominantasthematerialscalebecomescompa-limitingdim
5、ensionis34nm.Withnonlinearspatialfrequencyrabletothewavefunctionsofelementaryexcitations:elec-multiplicationtechniques,thislimitisextendedbyfactorsof1/2,1/3,etc.extendingwellintothenanoscaleregime.ILprovidestrons,holes,photons,spinwaves,magneticexci
6、tations,andaninexpensive,large-areacapabilityasaresultofitsparallelism.others.Multipleexposures,multiplebeams,andmix-and-matchwithOpticallithographyiswellestablishedasthemanufac-otherlithographiesextendtherangeofapplicability.ImagingILturingtechnolog
7、yofchoiceforthesemiconductorICin-providesanapproachtoarbitrarystructureswithcomparabledustrywhichistodaywellintothenanoscalewith65-nmresolution.Numerousapplicationareas,includingnanoscaleepitaxialgrowthforsemiconductorheterostructures;nanofluidicsgate
8、lengthsinlarge-volumemanufacturingproduction.Withforbiologicalseparations;nanomagneticsforincreasedstoragerecentdevelopmentssuchasimmersionlithography,itnowdensity;nanophotonicsincludingdistributedfeedbackanddis-appearsthatthehegemonyofopticallithogr
