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1、3DMaskModelingforEUVLithography1*2322JulienMailfert,ChristianZuniga,VickyPhilipsen,KonstantinosAdam,MichaelLam,1334JamesWord,EricHendrickx,GeertVandenberghe,BruceSmith1MentorGraphicsCorp.,8005S.W.BoeckmanRd,Wilsonville,OR97070,USA2MentorGraphicsCorp.,46871BaysideParkwayFre
2、mont,CA94538,USA3imec,Kapeldreef75,B-3001Leuven,Belgium4RochesterInstituteofTechnology,1LombMemorialDrive,Rochester,NY14623,USA*contact:jxm2803@g.rit.eduABSTRACTInthiswork,3DmaskmodelingcapabilitiesofCalibrewillbeusedtoassessmasktopographyimpactonEUVimaging.TheEUVmaskabsor
3、berheightandthenon-telecentricilluminationatmasklevel,modulatethecapturedintensityfromtheshadowedmaskareathroughthereflectiveopticsontothewafer,namedasthemaskshadowingeffect.Ontheotherhand,thinningthemaskabsorberheightresultsinunwantedbackgroundintensity,orcalledflare.Atru
4、ecompromisehastobetakenintoaccountfortheheightparameterofaEUVmaskabsorber.Wewilldiscussthestate-of-the-art3Dmaskmodelingcapabilities,andwillpresentmethodologiestotacklethedescribedEUVmaskshadowingeffectinCalibresoftware.ThefindingswillbevalidatedagainstexperimentsonASML’sN
5、XE:3100EUVscanneratimec.Maskswithtwodifferentabsorberheightswillbeevaluatedonvariouscombinationsoffeaturescontainingline/spaceandcontact-hole.Keywords:EUVreflectivemask,absorberthickness,maskshadowingeffect,domaindecompositionmethod1.INTRODUCTIONWiththeshipmentofthefirstEU
6、Vpreproductiontools,ASMLNXE:3100,todifferentfacilitiesworldwide,thefieldofEUVlithographyhasmovedforwardsignificantlyinordertoofferthecapabilityofextendingMoore’slaw.NumerousaccomplishmentshavebeenmadeoverthelastyearstoprovideEUVresist,aswellasdefectfreemasks.Nevertheless,s
7、ourcepowerremainsachallengetoensurethecompleteandsuccessfulimplementationofEUVintheindustry.Scalingdowntoawavelengthof13.5nmforEUVlithographyrequiresdedicatedoptics,materials,andaboveallreflective1reticles.Aschematic,showninFig.1,illustratesthemaincomponentsoftheEUVscanner
8、.Thereflectivemaskstackandnon-telecentricilluminationatmasksideinducenewimagingeffectswhi
