A Compact CMOS UWB LNA Using Tunable Active .pdf

A Compact CMOS UWB LNA Using Tunable Active .pdf

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时间:2019-03-01

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1、ACompactCMOSUWBLNAUsingTunableActiveInductorsforWLANInterferenceRejectionMd.MahbubRejaIgorFilanovsky,KambizMoezDept.ofElectricalandComputerEngineeringDept.ofElectricalandComputerEngineeringUniversityofAlbertaUniversityofAlbertaEdmonton,Alberta,CanadaEdmonton,Alberta,Canadamreja@e

2、ce.ualberta.ca{igor;kambiz}@ece.ualberta.caAbstract—Acompact2.0-11.0GHzCMOSultra-wideband(UWB)low-noiseamplifier(LNA)usingtunableactiveinductorsforsuppressingin-band(over4.8-6.0GHz)WLANinterferencesignalsispresented.IntheproposedLNA,theactiveinductorinserieswithasmallcapacitorfor

3、msanactiveLCresonatorwhichrejectsornotchestheundesiredsignalsattheresonancefrequency.EmployingmultipleresonatorsintheLNAincreasestherejectiondepth.Moreover,thetunabilityoftheactiveinductorsallowsfornotchingthesignalsoverawidefrequencyrange.Designedandsimulatedina90nmdigitalCMOSpr

4、ocess,theproposedLNAwithsuchactiveinductorsusedinnotch2filtersoccupiesacorechip-areaofonly0.0182mm.TheLNAexhibitsanaveragepowergainof16.5dBover2.0-11.0GHzFigure1:Bandsandband-groupsofMB-UWBsystemsbandwidthwhiletherejectionofunwantedWLANinterferenceinductorsthatcanbeimplementedini

5、nexpensivedigitalsignalsis-44.8dBat5.81GHz.Thenotch-frequencycanbeCMOSprocesses.tunedinexcessof4.5-6.6GHz,andtherejectiondepthcanbeincreasedto-87.5dB,thehighestrejectionamongthereportedInthispaper,wepresentathree-stageUWBLNAusingnotch-filterUWBLNAs.seriesactiveLC-resonatorsinthei

6、nputandoutputstageswhereactiveinductorsreplacepassiveinductors(L).AnactiveI.INTRODUCTIONinductor(AI)consistsofonlyafewtransistors.Therefore,itoccupiesafractionoftheareaofapassiveinductorandiswellUWBradiotechnologyusesthebandwidthof3.1-compatibletobeimplementedinstandarddigitalCMO

7、S10.6GHz(7.5GHz),andinmultiband(MB)UWBsystemstheprocesses.Moreover,thebiasdependentoperationofactive7.5GHzUWBspectrumisdividedintofourteensub-bandsofinductorsallowsfortuningthemwidely[5].Theproposed528MHzeachasshowninFig.1[1].Then,thesebandsareLNAisdesignedandsimulatedinSTMicroel

8、ectronics90nmgroupedintofiveband-groups,

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