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1、RTU3B-4A2.5-dBNF3.1–10.6-GHzCMOSUWBLNAwithSmallGroup-Delay-VariationJen-HowLee,Chi-ChenChen,Hong-YuYang,andYo-ShengLinDepartmentofElectricalEngineering,NationalChiNanUniversity,Puli,Taiwan,R.O.C.Tel:886-4-92912198,Fax:886-4-92917810,Email:stephenlin@ncnu.edu.twAbstract−A3.1-10.6-GHzultra-widebandlow
2、-noiseamplifier(UWBVDD=1.2VInductiveLNA)withexcellentphaselinearityproperty(group-delay-variationC3=shunt-peakingisonly±16.7psacrossthewholeband)usingstandard0.13µm8.5pFLD2=CMOStechnologyisreported.Toachievehighandflatgainand771.4pHsmallgroup-delay-variationatthesametime,theinductivepeakingInductive
3、RF2=RD2=series-peaking5.6k34.3techniqueisadoptedintheoutputstageforbandwidthenhancement.RFOUTTheUWBLNAdissipates10.68mWpowerandachievesinputLG2=317pHreturnloss(S11)of−17.5~−33.6dB,outputreturnloss(S22)of−14.4M2W/L=45/0.13m~−16.3dB,flatforwardgain(S21)of7.92±0.23dB,andreverseCC2=1=LD1=isolation(S12)o
4、f−25.8~−41.9dBoverthe3.1-10.6GHzbandof1.35pF4.3nH7.76pFinterest.State-of-the-artnoisefigure(NF)of2.5dBisachievedat10.5GHz.Themeasured1-dBcompressionpoint(P1dB)andinputRF1=C=1.27pFF1254third-orderinter-modulationpoint(IIP3)were−14dBmand−4dBm,respectively,at6GHz.RFINMW/L=1283/0.13mIndexTerms−lowpower,
5、groupdelay,linearity,CMOS,UWB,RG1=LG1=3.42k1.31nHlow-noiseamplifierVG1=0.64V(a)I.INTRODUCTIONRecently,RF-CMOSprocesseshavebecomemoreandmorepopularforRFICsdesignbecauseitiscost-effectiveandcompatiblewiththesilicon-basedsystem-on-a-chip(SOC)technology[1]-[4].InUWBreceiverfront-enddesign,UWBLNAisacriti
6、calblockthatreceivessmallsignalsfromthewholeUWBband(3.1-10.6GHz)andamplifiesthemwithagoodsignal-to-noiseratioproperty.Inaddition,highandflatpowergainS21,inputandoutputimpedancematching(i.e.lowS11andS22),andgoodNFperformancesacrossthewholeUWBbandarerequired.Recently,severalCMOSUWBLNAshavebeenreported
7、[1]-[5].ForanUWBLNAdesignedforOFDMsystems[2],powerlinearityisatightrequirement(b)forsuppressingadjacentchannelinterferences,whileitisFig.1(a)Completeschematic,and(b)diephotooftherelaxedintheUWBpulse-r