cmos active inductor linearity improvement using feed-forward current source technique

cmos active inductor linearity improvement using feed-forward current source technique

ID:7298883

大小:1.16 MB

页数:10页

时间:2018-02-10

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1、IEEETRANSACTIONSONMICROWAVETHEORYANDTECHNIQUES,VOL.57,NO.8,AUGUST20091915CMOSActiveInductorLinearityImprovementUsingFeed-ForwardCurrentSourceTechniqueChun-LeeLer,StudentMember,IEEE,AbuKhariBinAain,Member,IEEE,andAlbertVictorKordesch,SeniorMember,IEEEAbstrac

2、t—MOSFETdraincurrentsecond-ordernonlinearityActiveinductornonlinearbehaviorcanbecharacterizedbyhasasignificantimpactonthelinearityofcurrentregulatedtwodifferentmethods,totalharmonicdistortion(THD)andCMOSactiveinductors.IttendstocompressMOSFETtranscon-1-dBind

3、uctancecompression[13].THDdescribesductancebygeneratingexcessdccurrentinthetheratiooftotalunwantedharmoniccurrenttofundamentalchannel,whichisafunctionofincominginputsignalamplitude.Thisgeneratedexcessdccurrentcanchangetheoriginaldcoper-currentwhenafun

4、damentalacinputsignalhasbeeninjectedatingpointofthecurrentregulatedCMOSactiveinductor,andintotheactiveinductor.THDcanbedefinedasfollows:thus,influencetheinductance.Unfortunately,MOSFETdraincurrentsecond-ordernonlinearitycontributesmoretoMOSFETcompressionthanM

5、OSFETdraincurrentthird-ordernon-(1)linearity.Inthispaper,anewtechniqueknownasfeed-forwardcurrentsource(FFCS)hasbeenproposedtoimprovethelinearityoftheactiveinductor.TheproposedFFCStechniquemakesuseofwhereandarefundamentalandthharmoniccurrentofthesecond-order

6、nonlinearpropertyofaMOSFETthatgeneratestheactiveinductor,respectively.However,THDdoesnotpro-whenaninputacsignalisapplied.Thegeneratedisvideinformationonsensitivityofinductancetotheinputsignalthenfed-forwardtothecurrentsourceoftheactiveinductoramplitude.

7、Thus,shouldbeusedtodescribetheinflu-todrainouttheintheactiveinductor.Thispreventsthedcoperatingpointfromshiftingandimprovesitsinductanceenceofinputsignalamplitudeoninductance.canbelinearity.Single-endedanddifferentialactiveinductorswithdefinedastheinputvolt

8、ageorcurrentamplitudewhenthein-theproposedFFCScircuithavebeenfabricatedusingSilterra’sductanceoftheactiveinductorhasbecome1dBor10.9%largerCMOS0.18-mtechnologytoverifytheproposedtechnique.thanitssmall-s

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