6.7 ghz high-q active inductor design using parasitic cancellation with process variation control

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1、6.7GHzhigh-Qactiveinductordesignusing1/Yin,andYinisgivenby:parasiticcancellationwithprocessvariationYin=gds+jvCgs1+Y1+Y2+Y3−Y4controlgm1gm2(B1−gm1gm2g1)where:Y1=A.AhmedandJ.WightB1(YL+jvCgs2)g2g(Y+jvC)Y(g+jvC)Ym11Lgs2Lm2gs2Acorrectiontoapreviouslypubl

2、ishedQ-andbandwidth-enhancing2=,Y3=designtechniqueusingparasiticcancellationtoobtainahigh-QB1YL+jvCgs2(3)activeinductoroperatingatfrequenciesabove6GHzusingnon-gm1gm2g1YL(gm2+jvCgs2)minimal-lengthCMOStechnologiesispresented.Ameasuredinduc-Y4=B1(YL+jvCg

3、s2)tanceof1.9nHisacheivedat6.75GHzwithaQof38occupying2only0.0026mmsiliconchiparea.Theactiveinductoristhenusedg1=gds+YL+jv(Cgs1+Cgs2)toobtainanarrowbandoutputmatchingelementforanLNAwithitsinputunmatchedin130nmCMOStechnology.Theinput-unmatchedB=g2(g+jvC

4、)−(Y+jvC)B1m2dsgs1Lgs22inductorlessLNAparametersmeasuredat6.7GHzare:S2112.8dB,B2=(YL+jvCgs2)(gds+jvCgs1)+gm1YL(YL+jvCgs2)3.5GHzBW,NF7.2dB(withsimulatedNFminof3.3dB)andS22lessthan220dB,whileconsumingonly6.4mWwitha1.2VTheequationsfortheSEAIwereinsertedi

5、ntoMatlabforfunctionalitysupply.ThehighNFcanbeeasilyreducedtoNFminwithinputandFig.2leftshowsthesimulationresult,whichissimilartoFig.6inmatching.[1],whichshowsthesimulationresultinCadence.Inbothsimulations,itcanbeseenhowtherealpartoftheimpedancedecreas

6、eswithfrequencyIntroductionandcorrection:Activeinductorsareusedinseveralvitaltillthecircuitreachesself-resonancefrequency.AlthoughthisfrequencyRFcircuits[1,2]andsavechiparea,minimisingsiliconcosts.responseiscomparabletotheresultinFig.1in[3],thehigh-QA

7、Iin[3]However,nonehasbeenshowntooperateatfrequenciesaboveissusceptibletoprocessvariation.Ontheotherhand,thisAIisbiased6GHz.Reference[2]hassub-gigahertzoperation,whiletheUWBviadecouplingcapacitors,andthebiasvoltagecanbecontrolledovergainin[3]couldhavee

8、asilybeenobtainedbyoffsetinginputmatchingprocess.Table1showsthecornersimulationresultsgivingbiasvoltagesandactiveinductor(AI)tuningratherthanusingtocascadedLNAswithforaninductorofapproximately2.6nHinductancewithaQof40.VbL2twoAIloadscentredatdi