资源描述：
《cmos source degenerated differential active inductor》由会员上传分享，免费在线阅读，更多相关内容在工程资料-天天文库。
1、CMOSsourcedegenerateddifferentialactiveinductorC.L.Ler,A.K.B.A’ainandA.V.KordeshAnewCMOSsourcedegenerateddifferentialactiveinductorispro-posed.Theproposeddifferentialactiveinductorrequiredonlysixtran-sistorsormoreforproperoperation.Itisverycompactcomparedtoaconventionaldifferentialactiveinductort
2、hatwasdesignusingtwodifferentialtransconductorsandwhichrequiresatleasttentransistors.TheproposedactiveinductorwasfabricatedusingSilterra0.18mmCMOSprocessfordemonstration.Measurementresultsshowthattheproposedactiveinductorhasawidetuningrangewithamaximumres-onancefrequencyof7.85GHz.Fig.2CMOSsourced
3、egenerateddifferentialactiveinductor(SDD-AI)andIntroduction:CMOSactiveinductorshavebecamepopularinmicro-itsequivalenthalf-circuitsimplifiedmodelwaveandRFcircuitdesignowingtoseveraluniquepropertiessuchasaCMOSsourcedegenerateddifferentialactiveinductorwideinductancetuningrange,compactsizeandhighindu
4、ctancebEquivalenthalf-circuitsimplifiedmodelvaluewithhigherresonancefrequency(fR).VariousapplicationsoftheactiveinductorincludeVCOs[1],filters[2],quadraturehybridsAssumingtheSDD-AIisperfectlysymmetrical,Yincanbesimply[3],andcurrent-modePLLs[4].InthisLetter,anewsourcedegeneratedderivedusinghalf-circ
5、uitsmall-signalanalysis,shownasfollows:differentialactiveinductor(SDD-AI)isproposed.TheproposedSDD-AIhasvariousadvantagesincludingbeingeasytodesign,widerinduc-iinYin¼’gmMS1gmM1þsCvintancetuningrange,higherfR,andverycompactsizeowingtothevinminimumusageoftransistors.g2þmM1ð2ÞgmM1gmM3þsðCgsM
6、1þCv2ÞDesignapproach:ThebasicideaoftheproposedactiveinductoriswheregmandCgsarethetransconductanceandthegate-sourcecapaci-basedonsourcedegenerationofatransistor,M1,asshowninFig.1.tanceofcorrespondingtransistors,Cv2andCvinarethetotalparasiticFirst,acapacitoristerminatedatthesourceM1,whiletheinputca
7、pacitanceatnodev2andvin,respectively.From(2),theSDD-AIcansignalwithoppositesign(þvinand2vin)isappliedsimultaneouslytobesimplymodelledasalossyresonator(Fig.2b)wherethedrainandgateofM1,respectively.Theinputimpedance(Yin)
