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1、DTM4830N-Channel80V(D-S)MOSFETFEATURESPRODUCTSUMMARYa•Halogen-freeAccordingtoIEC61249-2-21VDS(V)RDS(on)()ID(A)Qg(Typ.)Definition0.075atVGS=10V3.5®807.3nC•TrenchFETPowerMOSFET•100%RgandUISTested•ComplianttoRoHSDirective2002/95/ECAPPLICATIONS•DC/DCConversion-NotebookSystemPowerSO-8D1D2S118D1G127D
2、1S236D2G245D2G1G2S1S2TopViewAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedParameterSymbolMaximumUnitsDrain-SourceVoltageVDS80VGate-SourceVoltageVGS±30VContinuousDrainTA=25°C3.5IDCurrentTA=70°C2.9ACPulsedDrainCurrentIDM18CAvalancheCurrentIAR16ACRepetitiveavalancheenergyL=0.1mHEAR12.8mJTA=25°C2
3、BPPowerDissipationDWTA=70°C1.3JunctionandStorageTemperatureRangeTJ,TSTG-55to150°C23553Q68872黄R1376032电5070ThermalCharacteristicsParameterSymbolTypMaxUnitsAMaximumJunction-to-Ambientt≤10s4862.5°C/WADRqJAMaximumJunction-to-AmbientSteady-State7490°C/WMaximumJunction-to-LeadSteady-StateRqJL3240°C/WD
4、TM4830ElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)SymbolParameterConditionsMinTypMaxUnitsSTATICPARAMETERSBVDSSDrain-SourceBreakdownVoltageID=250mA,VGS=0V80VVDS=80V,VGS=0V1IDSSZeroGateVoltageDrainCurrentmATJ=55°C5IGSSGate-BodyleakagecurrentVDS=0V,VGS=±30V100nAVGS(th)GateThresholdVoltage
5、VDS=VGSID=250mA3.54.25VID(ON)OnstatedraincurrentVGS=10V,VDS=5V18AVGS=10V,ID=3.5A6275RDS(ON)StaticDrain-SourceOn-ResistancemWTJ=125°C113.0135gFSForwardTransconductanceVDS=5V,ID=3.5A15SVSDDiodeForwardVoltageIS=1A,VGS=0V0.771VISMaximumBody-DiodeContinuousCurrent2.5ACISMPulsedBody-diodeCurrent18ADYN
6、AMICPARAMETERSCissInputCapacitance510640770pFCossOutputCapacitanceVGS=0V,VDS=40V,f=1MHz284052pFCrssReverseTransferCapacitance122030pFRgGateresistanceVGS=0V,VDS=0V,f=1MHz0.91.82.7WSWITCHINGPARAMETERSQg(10V)TotalGateCharge81113nCQg(4.5V)TotalGateCharge45.57VGS=10V,VDS=40V,ID=3.5AQgsGateSourceCharg
7、e456nCQgdGateDrainCharge0.71.21.7nCtD(on)Turn-OnDelayTime7.2nstrTurn-OnRiseTimeVGS=10V,VDS=40V,RL=8W,2.2nstD(off)Turn-OffDelayTimeRGEN=3W17nstfTurn-OffFallTime2nstrrBodyDiodeReverseRecoveryTimeIF=3.5A,dI/dt=300A/ms142026nsQr
