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1、DTE2312N-Channel20-V(D-S)MOSFETFEATURESPRODUCTSUMMARYa•Halogen-freeVDS(V)RDS(on)(Ω)ID(A)Qg(Typ.)®•TrenchFETPowerMOSFET0.0193atVGS=10V4.8®•NewThermallyEnhancedPowerPAKRoHS200.022atVGS=4.5V4.87.9nCSC-70PackageCOMPLIANT0.028atVGS=2.5V4.5-SmallFootprintArea-LowOn-Resistance•100%RgTested
2、TO-226AA(TO-92)DAPPLICATIONS•LoadSwitchS1G2GD3SN-ChannelMOSFETTopViewABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS20VGate-SourceVoltageVGS±12TC=25°C4.8aTC=70°C4.5aContinuousDrainCurrent(T=150°C)aIDJTA=25°C4.8a,b,cTA=70°C4.5a,b,cAPul
3、sedDrainCurrentIDM20TC=25°C4.5aContinuousSource-DrainDiodeCurrentISTA=25°C2.9b,cTC=25°C1.9TC=70°C1.2MaximumPowerDissipationPDWTA=25°C0.5b,cTA=70°C0.2b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CSolderingRecommendations(PeakTemperature)260THERMALRESISTANCERATINGSPar
4、ameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientt≤5sRthJA2836°C/WMaximumJunction-to-Case(Drain)SteadyStateRthJC5.36.5Notes:a.Packagelimitedb.SurfaceMountedon1"x1"FR4board.c.t=5s.23553Q68872黄R1376032电50701DTE2312SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestCon
5、ditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=250µA20VVDSTemperatureCoefficientΔVDS/TJ25ID=250µAmV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ-3.7Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=250µA0.61.5VGate-SourceLeakageIGSSVDS=0V,VGS=±12V±100nAVDS=20V,VGS=0V
6、1ZeroGateVoltageDrainCurrentIDSSµAVDS=20V,VGS=0V,TJ=55°C10On-StateDrainCurrentaID(on)VDS≤5V,VGS=4.5V20AVGS=10V,ID=4.8A0.01860.0193Drain-SourceOn-StateResistanceaRDS(on)VGS=4.5V,ID=4.8A0.0210.022ΩVGS=2.5V,ID=4.8A0.0250.028ForwardTransconductanceagfsVDS=10V,ID=4.8A20SDynamicbInputCapa
7、citanceCiss1020OutputCapacitanceCossVDS=10V,VGS=0V,f=1MHz160pFReverseTransferCapacitanceCrss70VDS=10V,VGS=10V,ID=4.8A17.527TotalGateChargeQg7.916nCGate-SourceChargeQgsVDS=10V,VGS=4.5V,ID=4.8A2.1Gate-DrainChargeQgd1.1GateResistanceRgf=1MHz0.636ΩTurn-OnDelayTimetd(on)1218RiseTimetrVDD
8、=10V,RL=1.3Ω1117Tur
