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1、DTC3059P-Channel30-V(D-S)MOSFETPRODUCTSUMMARYFEATURES•Halogen-freeVDS(V)RDS(on)(Ω)ID(A)Qg(Typ.)•TrenchFET®PowerMOSFET0.060atVGS=-10V7.6a-30a2nC•100%RgTestedRoHS0.075atVGS=-4.5V6COMPLIANTAPPLICATIONS•DC/DCConverter-LoadSwitchSD-AdaptorSwitchGDGDSP-ChannelMOSFETA
2、BSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS-30VGate-SourceVoltageVGS±20TC=25°C-7.6aTC=85°C-5.8ContinuousDrainCurrent(TJ=150°C)IDTA=25°C-6a,b,cTA=85°C-5.2b,cAPulsedDrainCurrentIDM-20TC=25°C-5.3ContinuousSource-
3、DrainDiodeCurrentISTA=25°C-2.1b,cTC=25°C6.3TC=85°C3.3MaximumPowerDissipationPDWTA=25°C2.5b,cTA=85°C1.3b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CSolderingRecommendations(PeakTemperature)260THERMALRESISTANCERATINGSParameterSymbolTypicalMaximu
4、mUnitMaximumJunction-to-Ambientt≤5sRthJA4050°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF1520Notes:a.Packagelimited.b.SurfaceMountedon1"x1"FR4board.c.t=5s.1DTC3059SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.Max.UnitStatic
5、Drain-SourceBreakdownVoltageVDSVGS=0V,ID=-250µA-30VVDSTemperatureCoefficientΔVDS/TJ-30ID=-250µAmV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ5Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1-3VGate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nAVDS=-30V,VGS=0V-1Zero
6、GateVoltageDrainCurrentIDSSµAVDS=-30V,VGS=0V,TJ=85°C-5On-StateDrainCurrentaID(on)VDS≤-5V,VGS=-10V-20AVGS=-10V,ID=-7.2A0.0550.060Drain-SourceOn-StateResistanceaRDS(on)ΩVGS=-4.5V,ID=-6.0A0.0660.075ForwardTransconductanceagfsVDS=-15V,ID=-7.2A18SDynamicbInputCapaci
7、tanceCiss1340OutputCapacitanceCossVDS=-15V,VGS=0V,f=1MHz215pFReverseTransferCapacitanceCrss185VDS=-15V,VGS=-10V,ID=-7.2A2842TotalGateChargeQg1523nCGate-SourceChargeQgsVDS=-15V,VGS=-4.5V,ID=-7.2A4.5Gate-DrainChargeQgd7.2GateResistanceRgf=1MHz1.2612ΩTurn-OnDelayT
8、imetd(on)5075RiseTimetrVDD=-15V,RL=2.6Ω140210Turn-OffDelayTimetd(off)ID≅-5.8A,VGEN=-4.5V,Rg=1Ω3045FallTimetf1827nsTurn-OnDelayTimetd(on)1117RiseTimetrVDD=-15V,RL=2.6Ω1117Tur
