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1、DTM4953DualP-Channel30V(D-S)MOSFETFEATURESPRODUCTSUMMARY•TrenchFET®PowerMOSFETVDS(V)-30c•AEC-Q101QualifiedRDS(on)()atVGS=-10V0.046•100%RgandUISTestedRDS(on)()atVGS=-4.5V0.078ID(A)perleg-5.4ConfigurationDualSO-8S1S2S118D1G127D1G1G2S236D2G245D2TopViewD1D2P-ChannelMOSFETP
2、-ChannelMOSFETABSOLUTEMAXIMUMRATINGS(TC=25°C,unlessotherwisenoted)PARAMETERSYMBOLLIMITUNITDrain-SourceVoltageVDS-30VGate-SourceVoltageVGS±20TC=25°C-5.4ContinuousDrainCurrentIDTC=125°C-3.8ContinuousSourceCurrent(DiodeConduction)IS-3APulsedDrainCurrentaIDM-26SinglePulseAval
3、ancheCurrentIAS-17L=0.1mHSinglePulseAvalancheEnergyEAS14mJTC=25°C3.3MaximumPowerDissipationaPDWTC=125°C1.1OperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to+175°CTHERMALRESISTANCERATINGSPARAMETERSYMBOLLIMITUNITJunction-to-AmbientPCBMountbRthJA110°C/WJunction-to-Foot(
4、Drain)RthJF45Notesa.Pulsetest;pulsewidth300μs,dutycycle2%.b.Whenmountedon1"squarePCB(FR-4material).c.Parametricverificationongoing.1DTM4953SPECIFICATIONS(TC=25°C,unlessotherwisenoted)PARAMETERSYMBOLTESTCONDITIONSMIN.TYP.MAX.UNITStaticDrain-SourceBreakdownVoltageVDSVGS=0
5、V,ID=-250μA-30--VGate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250μA-1.5-2.0-2.5Gate-SourceLeakageIGSSVDS=0V,VGS=±20V--±100nAVGS=0VVDS=-30V---1ZeroGateVoltageDrainCurrentIDSSVGS=0VVDS=-30V,TJ=125°C---50μAVGS=0VVDS=-30V,TJ=175°C---150On-StateDrainCurrentaID(on)VGS=-10VVDS
6、-5V-20--AVGS=-10VID=-4.9A-0.0350.045VGS=-10VID=-4.9A,TJ=125°C--0.066Drain-SourceOn-StateResistanceaRDS(on)VGS=-10VID=-4.9A,TJ=175°C--0.076VGS=-4.5VID=-3.7A-0.0650.078ForwardTransconductancebgfsVDS=-15V,ID=-4.9A-9-SDynamicbInputCapacitanceCiss-557670OutputCapacitanceCos
7、s-VGS=0VVDS=-25V,f=1MHz126190pFReverseTransferCapacitanceCrss-90115TotalGateChargecQg-1522Gate-SourceChargecQgsVGS=-10VVDS=-15V,ID=-4.9A-2.1nCGate-DrainChargecQgd-3.5-GateResistanceRgf=1MHz2.605.268.50Turn-OnDelayTimectd(on)-35RiseTimectrV=-15V,R=6.8-914DDLnsTurn-OffDel
8、ayTimectd(off)-2ID-1A,VGEN=-10V,Rg=1030FallTimectf-914Source-DrainDiodeRatingsandCharacteristi