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1、DTM4964N-Channel60-V(D-S)MOSFETFEATURESPRODUCTSUMMARY•Halogen-freeAccordingtoIEC61249-2-21VDS(V)RDS(on)(Ω)I(A)dQg(Typ.)DefinitionD0.035atV=10V7.6•TrenchFET®PowerMOSFETGS6010.5nC•Optimizedfor“LowSide”Synchronous0.040atVGS=4.5V7.6RectifierOperation•100%RgandUISTestedAPPL
2、ICATIONSD•CCFLInverterSO-8S18DS27DGS36DG45DSTopViewN-ChannelMOSFETABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS60VGate-SourceVoltageVGS±20T=25°C7.6aCTC=70°C6.8ContinuousDrainCurrent(TJ=150°C)IDb,cTA=25°C6.1TA=70°C4.8b,
3、cAPulsedDrainCurrentIDM25TC=25°C4.2ContinuousSource-DrainDiodeCurrentISb,cTA=25°C2.1AvalancheCurrentIAS15L=0.1mHSingle-PulseAvalancheEnergyEAS11.2mJTC=25°C5TC=70°C3.2MaximumPowerDissipationPDb,cWTA=25°C2.5TA=70°C1.6b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-
4、55to150°CTHERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,dt≤10sRthJA3850°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF2025Notes:23553Q68872黄R1376032电5070a.Packagelimited.b.Surfacemountedon1"x1"FR4board.c.t=10s.d.MaximumunderStea
5、dyStateconditionsis85°C/W.1DTM4964SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=250µA60VVDSTemperatureCoefficientΔVDS/TJ55ID=250µAmV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ-6.3Ga
6、te-SourceThresholdVoltageVGS(th)VDS=VGS,ID=250µA1.52.5VGate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nAVDS=60V,VGS=0V1ZeroGateVoltageDrainCurrentIDSSµAVDS=60V,VGS=0V,TJ=55°C10On-StateDrainCurrentaID(on)VDS≥5V,VGS=10V25AVGS=10V,ID=4.6A0.0300.035Drain-SourceOn-StateResistance
7、aRDS(on)ΩVGS=4.5V,ID=4.2A0.0350.040ForwardTransconductanceagfsVDS=15V,ID=4.6A20SDynamicbInputCapacitanceCiss1100OutputCapacitanceCossVDS=30V,VGS=0V,f=1MHz90pFReverseTransferCapacitanceCrss55VDS=30V,VGS=10V,ID=4.6A2132TotalGateChargeQg10.516nCGate-SourceChargeQgsVDS=30V
8、,VGS=4.5V,ID=4.6A3.5Gate-DrainChargeQgd4.2GateResistanceRgf=1MHz3.35ΩTurn-OnDelayTimetd(on)2030RiseTimetrVDD=30V,RL=5
