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1、DTM8205DualN-Channel2.5-V(G-S)MOSFETFEATURESPRODUCTSUMMARY•Halogen-freeOptionAvailableVDS(V)RDS(on)(Ω)ID(A)®•TrenchFETPowerMOSFETsPb-free0.022atVGS=4.5V6.6Available200.040atVGS=2.5V5.5RoHS*COMPLIANTDDTSSOP-8D18DS127S2S136S2G1G2G145G2S1S2TopViewABSOLUTEMAXIMUMRATINGSTA=25°
2、C,unlessotherwisenotedParameterSymbol10sSteadyStateUnitDrain-SourceVoltageVDS20VGate-SourceVoltageVGS±12TA=25°C6.65.2ContinuousDrainCurrent(TJ=150°C)aIDTA=70°C5.53.5APulsedDrainCurrentIDM30ContinuousSourceCurrent(DiodeConduction)aIS1.51.0TA=25°C1.51.0MaximumPowerDissipati
3、onaPDWTA=70°C0.960.64OperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CTHERMALRESISTANCERATINGSParameterSymbolTyp.Max.Unitt≤10s7283MaximumJunction-to-AmbientaRthJASteadyState100120°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF5570Notes:a.SurfaceMountedonFR4b
4、oard,t≤10s.23553Q68872黄R1376032电5070*PbcontainingterminationsarenotRoHScompliant,exemptionsmayapply.1DTM8205SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.aMax.UnitStaticGateThresholdVoltageVGS(th)VDS=VGS,ID=250µA0.61.6VGate-BodyLeakageIGSS
5、VDS=0V,VGS=±4.5V±200nAVDS=20V,VGS=0V1ZeroGateVoltageDrainCurrentIDSSµAVDS=20V,VGS=0V,TJ=70°C25On-StateDrainCurrentbID(on)VDS≤5V,VGS=4.5V30AVGS=4.5V,ID=6.5A0.01650.022Drain-SourceOn-StateResistancebRDS(on)ΩVGS=2.5V,ID=5.5A0.0330.040ForwardTransconductancebgfsVDS=10V,ID=6.5
6、A30SDiodeForwardVoltagebVSDIS=1.5A,VGS=0V0.711.2VDynamicaTotalGateChargeQg1218Gate-SourceChargeQgsVDS=10V,VGS=4.5V,ID=6.5A2.2nCGate-DrainChargeQgd3.6Turn-OnDelayTimetd(on)245365RiseTimetrVDD=10V,RL=10Ω330495nsTurn-OffDelayTimetd(off)ID≅1A,VGEN=4.5V,RG=6Ω8601300FallTimetf5
7、10765Notes:a.Fordesignaidonly;notsubjecttoproductiontesting.b.Pulsetest;pulsewidth≤300µs,dutycycle≤2%.Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyothercondi
8、tionsbeyondthoseindicatedintheoperationalsectionsofthespecificationsisnotimplied.Exposuretoabsol
