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1、DTM4425P-Channel30-V(D-S)MOSFETFEATURESPRODUCTSUMMARY•Halogen-freeAccordingtoIEC61249-2-21VDS(V)RDS(on)(Ω)ID(A)aQg(Typ.)Definition0.0088atVGS=10V-15•TrenchFET®PowerMOSFET-3027nC0.0105atVGS=4.5V-13.7•100%RgTestedAPPLICATIONS•LoadSwitches-NotebookPCsSO-8-DesktopPCsSSD18SD27GSD36GD45
2、TopViewDP-ChannelMOSFETABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS-30VGate-SourceVoltageVGS±20TC=25°C-15TC=70°C-12.7ContinuousDrainCurrent(TJ=150°C)IDb,cTA=25°C-13TA=70°C-10.4b,cAPulsedDrainCurrentIDM-50TC=25°C-4.7ContinousSourc
3、e-DrainDiodeCurrentISTA=25°C-2.1b,cTC=25°C5.7TC=70°C3.6MaximumPowerDissipationPDWTA=25°C2.5b,cTA=70°C1.6b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CTHERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,dt≤10sRthJA3550°C/WMaximumJun
4、ction-to-Foot(Drain)SteadyStateRthJF1822Notes:a.BasedonTC=25°C.b.SurfaceMountedon1"x1"FR4board.c.t=10s.d.MaximumunderSteadyStateconditionsis85°C/W.1DTM4425SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVoltageVDSVG
5、S=0V,ID=-250µA-30VVDSTemperatureCoefficientΔVDS/TJ-20ID=-250µAmV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ4.9Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1.2-2.5VGate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nAVDS=-30V,VGS=0V-1ZeroGateVoltageDrainCurrentIDSSµAVDS=-30V,VGS=0V,TJ
6、=55°C-5On-StateDrainCurrentaID(on)VDS≤-5V,VGS=-10V-30AVGS=-10V,ID=-13A0.00810.0088Drain-SourceOn-StateResistanceaRDS(on)ΩVGS=-4.5V,ID=-10A0.00970.0105ForwardTransconductanceagfsVDS=-15V,ID=-13A40SDynamicbInputCapacitanceCiss2610OutputCapacitanceCossVDS=-15V,VGS=0V,f=1MHz460pFRever
7、seTransferCapacitanceCrss395VDS=-15V,VGS=-10V,ID=-13A5380TotalGateChargeQg2741nCGate-SourceChargeQgsVDS=-15V,VGS=-4.5V,ID=-13A8Gate-DrainChargeQgd13GateResistanceRgf=1MHz0.42.14.2ΩTurn-OnDelayTimetd(on)5278RiseTimetrVDD=-15V,RL=1.5Ω4162Turn-OffDelayTimetd(off)ID≅-10A,VGEN=-4.5V,Rg
8、=1Ω3654FallTimetf1525nsTurn-OnDel
