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1、IndonesianJournalofPhysicsVol.15No.2,April2004GrowthofAmorphousSiliconGermanium(a-SiGe:H)AlloysThinFilmbyPECVD1)2)3)Mursal,A.Supu,I.Usman,T.Winata,Sukirno,andM.BarmawiLaboratoryForMaterialsElectronicPhysics,DepartmentofPhysics,ITB1)DepartmentofPhysics,SyiahKualaUniversity,BandaAceh2)DepartmentofPhys
2、ics,NusaCendanaUniversity,Kupang3)DepartmentofPhysics,HaluoleoUniversity,KendariE-mail:mursal311@yahoo.comAbstractHydrogenatedamorphoussilicon-germanium(a-SiGe:H)alloysthinfilmshadbeengrownbyPlasmaEnhancedChemicalVaporDeposition(PECVD)method.Thefilmsweregrownoncorningglass#7059fromagasmixtureofsilan
3、e(SiH4)andgermane(GeH4)10%dilutedinhydrogen(H2).UV-VIS-NIRspectraanalysisofa-SiGe:Halloysthinfilmsshowedthatthesub-bandgapabsorptionα(hν)spectraofa-SiGe:HalloysshifttolowerphotonenergywithincreasinginGeH4flowrate.Theopticalbandgapofa-SiGe:Halloydecreasednonlinearlyfrom0.94eV–0.75eVwithincreasinginGe
4、H4flowratefrom2.5sccm–25sccm.Thephoto-sensitivity(σph/σd)ofa-SiGe:Hthinfilmswereimprovedastheopticalbandgap(Eopt)increased.Keywords:a-SiGe:H,opticalbandgap,PECVD,photo-sensitivity.1.Introductionthe[Ge]/[Si]atomicratio.Besidethat,thedepositionparametersarealsoessentialindeterminingfilmsDuringthelastt
5、wentyyears,hydrogenatedproperties.amorphoussilicongermanium(a-SiGe:H)alloyshadbeenSeveralgroupshavetriedtopreparedintensivelyinvestigatedandwerestillapromisinghydrogenatedamorphoussilicongermanium(a-SiGe:H)candidateforphotovoltaicapplication,especiallyasthe1,5,8)alloysfromaSiH4/GeH4startinggasmixtur
6、e.Thebottomopticalabsorberfordoubleandtriplejunction1)qualityofsuchpreparedalloys,however,relativelypoorsolarcells.Thereasonforthiswasitspossibilitytoincomparisonwitha-Si:Hfilm,sinceahighdensityofcontroltheopticalgapinsilicongermaniumalloysto17-3Gedanglingbonds(>10cm)duetothepreferentiallowerenergyb
7、yaddingGetothealloyscomposition.The9)attachmentofHtoSi.bestdoublejunctioncellthatcombinesUnitedSolarbestThinfilmsiliconbasedmaterialsareobtainedfroma-Si:Htopcellandtheoptimizeda-SiGe:Hbottomcell2)alar
