Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM.pdf

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1、Chin.Phys.BVol.26,No.1(2017)018501Impactofneutron-induceddisplacementdamageonthesingleeventlatchupsensitivityofbulkCMOSSRAMXiao-YuPan(潘霄宇),Hong-XiaGuo(郭红霞)†,Yin-HongLuo(罗尹虹),Feng-QiZhang(张凤祁),Li-LiDing(丁李利),Jia-NanWei(魏佳男),andWenZhao(赵雯)NorthwestInstituteofNuclearTechnol

2、ogy,Xi’an710024,China(Received3August2016;revisedmanuscriptreceived26September2016;publishedonline30November2016)SincethedisplacementdamageinducedbytheneutronirradiationpriorhasnegligibleimpactontheperformanceofthebulkCMOSSRAM,weusetheneutronirradiationtodegradetheminori

3、tycarrierlifetimeintheregionsresponsibleforlatchup.Withtheexperimentalresults,wediscusstheimpactoftheneutron-induceddisplacementdamageontheSELsensitivityandqualitativeanalyzetheeffectivenessofthissuppressionapproachwithTCADsimulation.Keywords:displacementdamage,neutronir

4、radiation,singleeventlatchup,TCADsimulationPACS:85.30.De,61.80.–x,73.40.QvDOI:10.1088/1674-1056/26/1/0185011.Introductionsitiveoneistheminoritycarrierlifetime.AdecreaseintheminoritycarrierlifetimeleadstoadecreaseintheparasiticSingleeventlatchup(SEL)inspaceandatthegroundb

5、ipolartransistorgainandreducesthelatchupsensitivityofisoneofthemostwell-knownharderrors,whichisinherentbulkCMOSSRAM.totheCMOSICs.Thechargeinducedbytheioncanmod-ifytheelectricalfieldandpossiblytriggertheparasiticfour-TheaimofthispaperistoverifytheeffectivenessoflayerP–N–P–

6、Nstructure.[1–3]Underthiscircumstance,thetheneutronirradiationhardeningstrategy.Thebroadbeamreverse-biasedjunctionsbecomeconductive,resultingintheheavyionexperimentandthepulsedlaserexperimentwerelossoffunctionalityordevicedestruction.Tosuppressthisperformedtosupportourco

7、nclusion.Furthermore,thetech-phenomenon,manyhardeningmethodshavebeendevelopednologyassistedcomputeraideddesign(TCAD)simulationtomitigatetheSEL,suchasepitaxiallayer,guardrings,shal-toolwasutilizedtoexploretheunderlyingmechanismofthislowtrenchisolation,andsilicononinsulato

8、r(SOI)technology.hardeningstrategy.However,thesemethodswillchangetheinherentstructureandtechnologicalpr