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1、硼和磷摻雜的效應在鋁誘發結晶上的研究探討作者羅立奇指導教授：黃俊達中華民101年5月30日EffectsofboronandphosphorusdopingonthealuminuminducedcrystallizationofamorphoussiliconLi-ChiLuo,Jun・DarHuangDepartmentofElectrophysics,NationalChiayiUniversity,Chiayi600,TaiwanMicroelectronicsLabAbstractEffectsoftheboro
2、nandphosphorusdopingonthealuminuminducedcrystallization(AIC)ofamorphoussilicon(a-Si:H)wasinvestigated.AICjustrequireslowtemperature(belowtheeutectictemperatureof577°C)toformcontinuouspolycrystallinesilicon(poly・Si)filmwithhighquality.Boronandphosphorusdopinginsili
3、conmaterialsareveryimportantinformingp-njunctiondiodes.Wefoundthattheboronandphosphorusatomshaveatendencytoreducethefreeenergyofnucieating,andhencemorenucleationcenterswereinitializedatshorttime.Thusthesampleswithboronorphosphorusdopinghaveashorttimetofullycrystal
4、lize,butsmallgrainsizeisobservedinthesesamples.Relatedmechanismwasinvestigatedhere.1・IntroductionInrecentyears,polycrystallinesilicon(poly-Si)hasbecomeapromisingmaterialforthinfilmsolarcell,thin-filmliquid-crystal-display,andotherapplicationsinoptoelectronicdevice
5、s.BecausePoly-Sihashighercarriermobilityascomparedtoamorphoussilicon(a・Si).Atpresent,aluminuminducedcrystallization(AIC)isanalternativeandattractiveapproachtoformPoly-Sifilmsonglasssubstratewithlargegrainsizeandpreferentialcrystalorientation.TheAICtechniqueisbased
6、onthealuminum(Al)incontactwitha-Siandtransformsamorphousintocrystallinesiliconatlow-temperaturebelowthemeltingpointofglass.Butreviewthepreviousreports,moststudiesweredevotedtothere-crystallizationofintrinsicsilicon.AICondopedsiliconfilmswasveryfew.Boronandphosphor
7、usdopinginsiliconmaterialsareveryimportantinformingp・njunctiondiodes.Furthermore,thecausedAICfilmforintrinsica-Siisp-typeduetotheincorporationofAlatom.Forthedopingofboronandphosphorus,theboronandphosphorusatomswillaffectthetransportofAlatom,leadingtodifferentbehav
8、iorincrystallization.Thusinthiswork,effectsofboronandphosphorusdopingontheAICofa-Siwasinvestigated.2・ExperimentsAICprocessisshowninFig.1.Initially,Alwas
