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1、ThinSolidFilms402(2002)248–261ThinfilmatomiclayerdepositionequipmentforsemiconductorprocessingOferSneh*,RobertB.Clark-Phelps,AnaR.Londergan,JereldWinkler,ThomasE.SeidelGenus,Inc.,1139KarlstadDr.,Sunnyvale,CA,USAReceived4April2001;receivedinrevisedform
2、18September2001;accepted9October2001AbstractAtomiclayerdeposition(ALD)ofultrathinhigh-Kdielectricfilmshasrecentlypenetratedresearchanddevelopmentlinesofseveralmajormemoryandlogicmanufacturersduetothepromiseofunprecedentedcontrolofthickness,uniformity,
3、qualityandmaterialproperties.LYNX-ALDtechnologyfromGenus,currentlyatbetaphase,wasdesignedaroundtheanticipationthatfutureultrathinmaterialsarelikelytobebinary,ternaryorquaternaryalloysornanolaminatecomposites.Auniquechemicaldeliverysystemenablessynergy
4、betweentraditional,production-provenlowpressurechemicalvapordeposition(LPCVD)technologyandatomiclayerdeposition(ALD)controlledbysequentialsurfacereactions.Sourcechemicalsfromgas,liquidorsolidprecursorsaredeliveredtoimpingeonreactivesurfaceswhereself-l
5、imitingsurfacereactionsyieldfilmgrowthwithlayer-by-layercontrol.Surfacesaremadereactivebytheself-limitingreactions,bysurfacespeciesmanipulation,orboth.Thesubstrateisexposedtoonereactantatatimetosuppresspossiblechemicalvapordeposition(CVD)contributiont
6、othefilm.Preciselycontrolledcompositematerialswithmultiple-componentdielectricandmetal–nitridefilmscanbedepositedbyALDtechniques.Theresearchcommunityhasdemonstratedthesecapabilitiesduringthepastdecade.Accordingly,ALDequipmentforsemiconductorprocessing
7、isunanimouslyinhighdemand.However,mainstreamdevicemanufacturersstillcriticizeALDtobenon-viableforSemiconductordeviceprocessing.ThisarticlepresentsabroadsetofdataprovingfeasibilityofALDtechnologyforsemiconductordeviceprocessing.2002ElsevierScienceB.V.
8、Allrightsreserved.Keywords:Chemicalvapordeposition(CVD);Depositionprocess;Semiconductors1.IntroductionAdditionally,highlyconformalconductivefilmsaredesiredforapplicationssuchascapacitorelectrodeandAtomiclayerdeposition(ALD)hasrecentlypene-inte
