Carrier techniques for thin wafer processing

Carrier techniques for thin wafer processing

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时间:2019-05-25

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1、CarriertechniquesforthinwaferprocessingC.Landesberger,S.Scherbaum,K.BockFraunhoferInstituteforReliabilityandMicrointegrationIZM,Munichbranchoftheinstitute,Hansastrasse27d,80686Munich,Germany;e-mail:christof.landesberger@izm-m.fraunhofer.de,phone:+49(0)8954759-295Keywords:reve

2、rsiblebonding,mobileelectrostaticcarriers,thinwaferprocessing,waferhandlingAbstractTHERMALRELEASETAPESThreedifferenttypesofcarriertechniqueshaveApplicationofthermalreleasetapeshasbecomeawidebeeninvestigatedanddeveloped:thermalreleasetapes,spreadmethodinordertosupportwaferswit

3、hlowsolvablethermoplasticgluelayerandmobileelectrostatictopographiesduringthinningprocesses.Acarrierisattachedcarrier.Thesecarrierswereappliedformanufactureoftotheprocesswaferbymeansofadouble-sidedadhesiveultra-thinRFIDchips,12µmthinCMOSimagesensorstapewithonesidethermalrelea

4、sable.Subsequently,andtoanewprocesssequencethatenablestheformationbacksidegrindingandetchingdownto10µmcanbeofsolderballsatthefrontsideofanalreadythinnedperformed.Removalofthecarrierisperformedbyaheatingdevicewafer.Technicalcapabilitiesofdifferentcarriertreatmentbetween90and15

5、0°C.Thismethodwasalsotechniquesarecomparedwithrespecttoallowedappliedforwaferswithhighsurfacetopography.Inthistemperaturerange,typeofbondingandde-bondingcase,devicetopographywasembeddedbyanadditionalmechanismandtheircompatibilitywithtypicalwafertape.Furthermorethismethodcanbe

6、combinedwiththefabprocesses.MobileelectrostaticcarrierswereusedtoDicing-by-Thinningtechnology(DbyT)asillustratedinFig.performsolderballbumpingat55µmthinsilicon1.Dicinggroovesarepreparedatwaferfrontsidewiththewafers.Theprocesssequencedemonstratesthetrenchdepthcorrespondingtoth

7、eprojectedchipthickness.capabilityofelectrostaticcarriertechnologytoenablePreparationofthesechipgroovescanbeaccomplishedbythinwaferprocessingatelevatedtemperatures.meansofawafersaworbysilicondryetching.AftermountingthetrencheddevicewafertothecarriersubstrateINTRODUCTIONthewaf

8、erpairisthinnedfromitsbacksideuntilthechipTheincreasingdemandforthin

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