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ID:38198467
大小:642.03 KB
页数:4页
时间:2019-05-25
《Carrier techniques for thin wafer processing》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、CarriertechniquesforthinwaferprocessingC.Landesberger,S.Scherbaum,K.BockFraunhoferInstituteforReliabilityandMicrointegrationIZM,Munichbranchoftheinstitute,Hansastrasse27d,80686Munich,Germany;e-mail:christof.landesberger@izm-m.fraunhofer.de,phone:+49(0)8954759-295Keywords:reve
2、rsiblebonding,mobileelectrostaticcarriers,thinwaferprocessing,waferhandlingAbstractTHERMALRELEASETAPESThreedifferenttypesofcarriertechniqueshaveApplicationofthermalreleasetapeshasbecomeawidebeeninvestigatedanddeveloped:thermalreleasetapes,spreadmethodinordertosupportwaferswit
3、hlowsolvablethermoplasticgluelayerandmobileelectrostatictopographiesduringthinningprocesses.Acarrierisattachedcarrier.Thesecarrierswereappliedformanufactureoftotheprocesswaferbymeansofadouble-sidedadhesiveultra-thinRFIDchips,12µmthinCMOSimagesensorstapewithonesidethermalrelea
4、sable.Subsequently,andtoanewprocesssequencethatenablestheformationbacksidegrindingandetchingdownto10µmcanbeofsolderballsatthefrontsideofanalreadythinnedperformed.Removalofthecarrierisperformedbyaheatingdevicewafer.Technicalcapabilitiesofdifferentcarriertreatmentbetween90and15
5、0°C.Thismethodwasalsotechniquesarecomparedwithrespecttoallowedappliedforwaferswithhighsurfacetopography.Inthistemperaturerange,typeofbondingandde-bondingcase,devicetopographywasembeddedbyanadditionalmechanismandtheircompatibilitywithtypicalwafertape.Furthermorethismethodcanbe
6、combinedwiththefabprocesses.MobileelectrostaticcarrierswereusedtoDicing-by-Thinningtechnology(DbyT)asillustratedinFig.performsolderballbumpingat55µmthinsilicon1.Dicinggroovesarepreparedatwaferfrontsidewiththewafers.Theprocesssequencedemonstratesthetrenchdepthcorrespondingtoth
7、eprojectedchipthickness.capabilityofelectrostaticcarriertechnologytoenablePreparationofthesechipgroovescanbeaccomplishedbythinwaferprocessingatelevatedtemperatures.meansofawafersaworbysilicondryetching.AftermountingthetrencheddevicewafertothecarriersubstrateINTRODUCTIONthewaf
8、erpairisthinnedfromitsbacksideuntilthechipTheincreasingdemandforthin
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