Thin Film Module Application in Semiconductor Industry.pdf

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1、ThinFilmModuleApplicationinSemiconductorIndustryThinFilmModuleI.CVD(ChemicalVaporDeposition)LPCVD/SACVD(Thermal)PECVD(Plasma)HDPCVD(Plasma)ALDCVDII.PVD(Sputtering)RISIMPSIP/EncoreThinFilmModuleIII.CMP(ChemicalMechanicalPolishing)IV.ECP(ElectrochemicalPla

2、ting)ThinFilmModuleApplicationThermalCVD–Oxide/Nitride(FEOL)PECVD–Oxide/Lowk/W(BEOL)HDPCVD–Oxideforgapfilling(STI/BEOLAlprocess)ALD–HighkPVD(Sputtering)–Al/CuseedIMP/SIP/Encore–Barrier(TiN,Ta/TaN)ThinFilmModuleCMPOxide/LowkWCuECP–CuPlatingICAlProcessMult

3、i-levelAlSubtractiveInterconnectArchitectureAlAlloyAlAlloyILD2WWTiorTiNAlAlloyAlAlloyAlAlloyILD1WTiN/TiWWPolySiPolySiGateFieldOxideFieldOxideMajorityoftheWorld’sDevicesareStillFabricatedinthisTechnologyICCuProcessTa/TaNIMD5IMD4IMD3CuIMD2IMD1ILDWSTISTISTI

4、n-wellp-wellPMOSNMOSSTILiner/SeedFunction
Liner1.Cudiffusionbarrier2.Cu/ILDgluelayer3.Oxygen/humiditypreventionlayer4.Redundantcarrierlayerforelectricalcurrent
Seed1.ConductivelayerforCuelectroplating2.NucleationlayerforCuelectroplatingSystemConfiguratio

5、nfor90nmCuBarrier/SeedRequirementsDegasPrecleanCuBarrierCuSeedDielectricDielectricDielectricDielectricMetalMetalMetalMetal•Removevolatile•Cleanunderlying•Preventsdiffusionof•Providesnucleationmetal•contaminants•Cuintodielectric•layerforelectroplating•int

6、erface•-Maxtemperature--LowviaandlineRc•-Lowoverhang(<350C)•-Cleanetchresiduewithtight/CuO-Smooth,conformalanddistributioncontinuousdeposition•-OutgasporousLowk--MinimzeCu•-EffectivebarriertoCuresputteringon-Goodadhesiontodiffusionbarrier•sidewallofvia•-

7、Goodadhesiontolowk--Nokchange(<5%)withoutpenetration--Goodtemperature•-Lowoverhangcontrol•-PromotegoodCu--Noprofilechangetextureofvias--CreatesurfaceforUniformBarrierNucleationWhyTaNx/TaBilayer?•TaNxhasbetterbarrierefficiencythanTaNominalBarrierTaFieldBa

8、rrierTaCoverageonThickness(>200Å)TrenchBottom(>60Å)ForGoodCuAdhesionBarrierTaN(>20Å)ontheSidewallforGoodDielectricAdhesionContinuousBarrierCoverageonSlopedHighViaBarrierSidewallAreas(>60Å)CoverageofTa(>60Å)forGoodCuAdhesio