tri-level-cell phase change memory-toward an efficient and reliable memory system

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1、Tri-Level-CellPhaseChangeMemory:TowardanEfficientandReliableMemorySystemNakHeeSeongSungkapYeoHsien-HsinS.LeeSchoolofElectricalandComputerEngineeringGeorgiaInstituteofTechnologyAtlanta,GA30332nakhee.seong@gmail.com{sungkap,leehs}@gatech.eduABSTRACTstatestostoremoredatapercell.

2、AlthoughtheMLCPCMincreasesinformationdensity,thistech-Thereareseveralemergingmemorytechnologiesloomingontheniquerequiresafiner-graincontrolovertheresistanceofacell.TohorizontocompensatethephysicalscalingchallengesofDRAM.locatetheresistanceofacellwithinapredefinedrange,theMLCPh

3、asechangememory(PCM)isonesuchcandidateproposedforPCMrequiresaniterative-writingmechanism,whichreadsthere-beingpartofthemainmemoryincomputingsystems.OnesalientsistanceimmediatelyafterawritetocheckwhetherthecellneedsfeatureofPCMisitsmulti-level-cell(MLC)property,whichcantobere

4、writtenornot.Thisiterative-writingdegradesthewritela-beusedtomultiplythememorycapacityatthecelllevel.How-tency.Recentstudiesshowedthatthewritelatencyofafour-level-ever,duetothenatureofPCMthatthevaluewrittentothecellcellisabout4x∼8xslowerthanthatofasingle-level-cell(SLC)candr

5、iftovertime,PCMispronetoauniquetypeofsofterrors,PCM[13].posingagreatchallengefortheirpracticaldeployment.ThispaperBesidestheperformanceissue,afarmorecriticalproblemoffirstquantitativelystudiedthecurrentartforMLCPCMindealingmakingMLCPCMpracticalisitsreliabilityconcerncausedbyt

6、hewiththeresistancedriftproblemandshowedthatthepreviouslyresistancedrift.Theresistancedriftisthephenomenonthatthere-proposedtechniquessuchasscrubbingorerrorcorrectionmecha-sistanceofaPCMcellincreasesovertime.Suchdriftingcausesnismshavesignificantreliabilitychallengestoovercom

7、e.Wethenauniquetypeofsofterrorsthatisdifferentfromsofterrorsofproposetri-level-cellPCManddemonstrateitsabilitytoachieving5DRAM.InDRAM,softerrorsareproducedbyparticlestrikes,and10×lowersofterrorratethanfour-level-cellPCMand1.33×theerrorrateisindependentofthestoredvalue.Incont

8、rast,MLChigherinformationdensitythansingle-level-cellPCM.AccordingPCMcellar