2_PPT_2_Architecting Phase Change Memory As DRAM Alternative

2_PPT_2_Architecting Phase Change Memory As DRAM Alternative

ID:40703535

大小:1.02 MB

页数:26页

时间:2019-08-06

2_PPT_2_Architecting Phase Change Memory As DRAM Alternative_第1页
2_PPT_2_Architecting Phase Change Memory As DRAM Alternative_第2页
2_PPT_2_Architecting Phase Change Memory As DRAM Alternative_第3页
2_PPT_2_Architecting Phase Change Memory As DRAM Alternative_第4页
2_PPT_2_Architecting Phase Change Memory As DRAM Alternative_第5页
资源描述:

《2_PPT_2_Architecting Phase Change Memory As DRAM Alternative》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库

1、ArchitectingPhaseChangeMemoryasaScalableDRAMAlternativeBenjaminLeey,EnginIpeky,OnurMutluz,DougBurgeryyComputerArchitectureGroupzComputerArchitectureLabMicrosoftResearchCarnegieMellonUniversityInternationalSymposiumonComputerArchitecture22June2009BenjaminC.

2、Leeetal.1::ISCA::22June09MotivationMemoryScalingTechnologyChargeMemoryArchitectureResistiveMemoryMemoryinTransitionIChargeMemoryBWritedatabycapturingchargeQBReaddatabydetectingvoltageVBExamples:Flash,DRAMIResistiveMemoryBWritedatabydrivingcurrentdQ=dtBRead

3、databydetectingresistanceRBExamples:PCM,MRAM,memristorBenjaminC.Leeetal.2::ISCA::22June09MotivationMemoryScalingTechnologyChargeMemoryArchitectureResistiveMemoryLimitsofChargeMemoryBUnscalablechargeplacementandcontrolBFlash:floatinggatechargeBDRAM:capacitor

4、charge,transistorleakageBenjaminC.Leeetal.3::ISCA::22June09MotivationMemoryScalingTechnologyChargeMemoryArchitectureResistiveMemoryTowardsResistiveMemoryIScalableBProgramwithcurrent/cellsizeBMapresistancetologicalstateINon-VolatileBSetatomicstructureincell

5、BIncuractivationcostICompetitiveBAchieveviabledelay,energy,enduranceBScaletofurtherimprovemetricsBenjaminC.Leeetal.4::ISCA::22June09MotivationMemoryScalingTechnologyChargeMemoryArchitectureResistiveMemoryPCMDeploymentBDeployPCMonthememorybusBBeginbyco-loca

6、tingPCM,DRAMBBeginbydeployinginlow-powerplatformsBenjaminC.Leeetal.5::ISCA::22June09MotivationPhaseChangeMemoryTechnologyTechnologyParametersArchitecturePriceofScalabilityOutlineIMotivationBMemoryScalingBChargeMemoryBResistiveMemoryITechnologyBPhaseChangeM

7、emoryBTechnologyParametersBPriceofScalabilityIArchitectureBDesignObjectivesBBufferOrganizationBPartialWritesBenjaminC.Leeetal.6::ISCA::22June09MotivationPhaseChangeMemoryTechnologyTechnologyParametersArchitecturePriceofScalabilityPhaseChangeMemoryBStoredat

8、awithinphasechangematerial[Ovshinsky68]BSetphaseviacurrentpulseBDetectphaseviaresistance(amorphous/crystalline)BenjaminC.Leeetal.7::ISCA::22June09MotivationPhaseChangeMemoryTechnologyTechnologyParametersArchi

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。