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1、ArchitectingPhaseChangeMemoryasaScalableDRAMAlternativeBenjaminC.Lee†EnginIpek†OnurMutlu‡DougBurger††ComputerArchitectureGroup‡ComputerArchitectureLaboratoryMicrosoftResearchCarnegieMellonUniversityRedmond,WAPittsburgh,PA{blee,ipek,dburger}@microsoft.comonur@cmu.eduABSTRACToryscaling,afirst-or
2、dertechnologyobjective,isinjeop-ardyforconventionaltechnologies.StoragemechanismsinMemoryscalingisinjeopardyaschargestorageandsensingprevalentmemorytechnologiesrequireinherentlyunscalablemechanismsbecomelessreliableforprevalentmemorytech-chargeplacementandcontrol.Inthenon-volatilespace,nologi
3、es,suchasDRAM.Incontrast,phasechangememoryFlashmemoriesmustpreciselycontrolthediscretecharge(PCM)storagereliesonscalablecurrentandthermalmecha-placedonafloatinggate.Involatilemainmemory,DRAMnisms.ToexploitPCM’sscalabilityasaDRAMalternative,mustnotonlyplacechargeinastoragecapacitorbutmustPCMmus
4、tbearchitectedtoaddressrelativelylonglaten-alsomitigatesub-thresholdchargeleakagethroughtheac-cies,highenergywrites,andfiniteendurance.cessdevice.CapacitorsmustbesufficientlylargetostoreWepropose,craftedfromafundamentalunderstandingofchargeforreliablesensingandtransistorsmustbesuffi-PCMtechnologyp
5、arameters,area-neutralarchitecturalen-cientlylargetoexerteffectivecontroloverthechannel.hancementsthataddresstheselimitationsandmakePCMGiventhesechallenges,manufacturablesolutionsforscal-competitivewithDRAM.AbaselinePCMsystemis1.6xingDRAMbeyond40nmareunknown[1].slowerandrequires2.2xmoreenergyt
6、hanaDRAMsys-Phasechangememory(PCM)providesanon-volatilestor-tem.Bufferreorganizationsreducethisdelayandenergyagemechanismamenabletoprocessscaling.Duringwrites,gapto1.2xand1.0x,usingnarrowrowstomitigatewriteanaccesstransistorinjectscurrentintothestoragemate-energyandmultiplerowstoimprovelocalit
7、yandwritecoa-rialandthermallyinducesphasechange,whichisdetectedlescing.Partialwritesenhancememoryendurance,provid-duringreads.PCM,relyingonanalogcurrentandther-ing5.6yearsoflifetime.Processscalingwillfurtherreducemaleffects,doesnotrequirecontr
