pld法制备氧化物异质结器件的研究

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1、PLD法制备氧化物异质结器件的研究摘要金属氧化物半导体因其具有优良的电、磁、光学等性能，被认为是可以拓展硅基器件功能的材料。其中Zn0是近十几年来非常热门的光电材料，而基于ZnO的异质结器件在光电探测、电致发光及太阳电池等许多领域具有良好的应用前景。本论文阐述了Zn0、NiO和Cu2znSnS4(CzTS)三种材料的结构、特点和研究进展，介绍了薄膜的沉积技术(PLD、磁控溅射和电子束蒸发)以及薄膜和器件的常规表征手段。制备了Zn0、NiO和CZTS靶材，利用PLD法在Si基片上制备了ZnO、NiO和CZTS薄膜，利用X射线衍射(XRD)和原子力显微镜(AFM)对薄膜的结晶

2、质量和表面形貌进行了表征。在Si(111)基片上制备了p—Ni0／n．Zn0异质结器件。研究了金属与半导体之间的接触问题，采用电子束蒸发法沉积Ti金属制备了器件的电极。使用AFM表征了Zn0薄膜的表面形貌，测试了p．NiO／n．ZnO器件的I．V特性，器件的理想因子为4，对光照的响应迅速。在Si(100)基片上制备了CZTS／Zn0和CZTS／Zn0／AZO两种结构器件，采用磁控溅射沉积Mo金属作为器件电极。测试了器件的I．V特性，并通过改变ZnO薄膜层的厚度来研究其对器件特性的影响。实验结果表明，ZnO层较薄时CZTS／ZnO／AZO器件的I．V特性好，串联电阻的影响小

3、。关键词：Zn0，NiO，Cu2ZnSnS4，脉冲激光沉积StudyofoxideheterojunctiondeVicesfabricatedbyPLDAbstractⅣ【etal-oxidesemiconductorisconsideredtobethematerialthatcanexpandthefunctionofsilicon—baseddeVices．ZnOisaverypopularoptoelectronicmaterialinthepastdecade，andZn0一basedheterojunctiondeViceshaVeagoodprospect

4、inphotoelectricdetection，electroluminescenceandsolarcell．Inthisthesis，thestructure，propertiesandresearchpogressofZnO，Ni0andCu2ZnSnS4(CZTS)weredescribed．Thedepositiontechniquesofthinfilms(PulseLaserDeposition，MagnetronSputtering，ElectronBeamEVaporation)andthecharacterizationmethodsofthinfi

5、lmsanddeviceswereintroduced．Zn0，Ni0andCZTStargetswereprepared．ZnO，NiOandCZTSthinfilmswerepreparedonSisubstratesbyPLD．Thecrystallinestructureandsurfacemorphologyofthefilmswerecharacterized．n-ZnO／p—Ni0heterojunctionwasfabricatedonSi(1l1)byPLD．Thecontactofmetalandsemiconductorwasstudied，andT

6、ielectrodesofthedeVicewerepreparedbyelectronbeameVaporation．Thesurfacemorph0109yofZn0thinfilmswascharaterizedbyAFM，theI-Vcharacteristicofn—zn0／p·NiOheterojunctionwastested．Theidealityfactorofthedeviceis4，thedeVicerespondsfasttolight．CZTS／ZnOandCZTS／Zn0／AZ0deViceswerefabricatedonSi(100)byP

7、LD，andMoelectrodes’ofthedeVicewerepreparedbymagnetronsputtering．TheI·VcharacterisiticsofthedeViceweretested，andthechangeofthecharacteristicswhenthethicknessofZnOlayerchangedwasstudied．TheresultsshowthattheI．VcharacteristicofCZTS／ZnO／AZOdevicesisbetterwhenZn0layerist