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1、LDMOS–TechnologyandApplicationsShekarMallikarjunaswamyShekarMAlpha&OmegaSemiconductorInc.1Technology.Innovation.PoweringtheFuture.Outline™PowerManagementMarketDrivers™LDMOSTechnologyInnovations°Structure,FOMs;Planar,Trench,RESURF™TCADSimulations;DeviceLayouts;SPICEModels™ProcessInt
2、egration–CMOS/BCDPlatforms™ReliabilityImprovements–HCIandESD™Applications–DC-DC,LED,Hot-swap,BatteryProtection™SummaryandFutureTrendsShekarMAlpha&OmegaSemiconductorInc.2PowerManagementMarketGrowth&KeyDrivers$30B$25B$20B$15BTAM$10B$5BEnablingEfficientConversion,RegulationandUtilizat
3、ionofPower$0B2007200820092010201120122013Sources:IMSJuly2010DiscreteReport(StandardMOSFETs,IGBTs,IGBTModules),IMS2007PowerICReport&April2009updateShekarMAlpha&OmegaSemiconductorInc.3PowerIntegratedCircuit-TAMPowerICTAM($M)PowerICTAM-Consumer($M)$3,500M$12,000M$3,000M$10,000M$2,500M
4、$8,000M$2,000M$6,000M$1,500M$4,000M$1,000M$2,000M$500M$0M20062007200820092010201120122013$0M20062007200820092010201120122013SumofTAM$$8,068$8,635$8,874$8,382$9,181$9,739$10,245$10,584TAM$$2,279$2,455$2,539$2,404$2,646$2,763$2,849$2,893PowerICTAM-Communications($M)PowerICTAM-Computi
5、ng($M)$5,000M$1,800M$4,500M$1,600M$4,000M$1,400M$3,500M$1,200M$3,000M$1,000M$2,500M$800M$2,000M$600M$1,500M$400M$1,000M$200M$500M$0M20062007200820092010201120122013$0M20062007200820092010201120122013TAM$$1,416$1,501$1,507$1,455$1,488$1,573$1,668$1,705TAM$$2,897$3,165$3,278$3,104$3,
6、529$3,825$4,089$4,334ShekarMAlpha&OmegaSemiconductorInc.4Outline™PowerManagementMarketDrivers™LDMOSTechnologyInnovations°Structure,FOMs;Planar,Trench,RESURF™TCADSimulations;DeviceLayouts;SPICEModels™ProcessIntegration–CMOS/BCDPlatforms™ReliabilityImprovements–HCIandESD™Applications
7、–DC-DC,LED,Hot-swap,BatteryProtection™SummaryandFutureTrendsShekarMAlpha&OmegaSemiconductorInc.5LDMOS–Structures–LVandHVLateralDiffusedMOS(LDMOS)LowVoltage(<30V)HighVoltage(>30V)BSGDBSDSelfAlignedGS/BImplantP+N+N+P+N+N+N-DRIFT1stSub-micronP-BODYN-DRIFT2P-BODYN-EPIN-DRIFT1N/P-EPICha
8、nnelNBLNBLVthigherthanPSub
