BONDING OF SILICON TO NONSTANDARDBONDING OF SILICON TO NONSTANDARD硅与非标准规范键合 基质.pdf

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1、BONDINGOFSILICONTONON-STANDARDSUBSTRATESNorthernIrelandSemiconductorResearchCentreSchoolofElectricalandElectronicEngineeringOUTLINE•Non-StandardSubstrates–Glass–Sapphire•BondingofSilicontoNon-StandardSubstrates–AnodicBonding(Glass)–ModifiedBondingprocess(Sapphire)NorthernIrelandSemiconductor

2、ResearchCentreSchoolofElectricalandElectronicEngineeringGrindandPolishSOIGrindandPolishtoHandlerequiredthicknessActiveSOIOxidisedhandlesubstrateActivesiliconsubstrateHandleHandleActiveRoomTemperaturebondingfollowedbyhightemperatureannealingNorthernIrelandSemiconductorResearchCentreSchoolofEl

3、ectricalandElectronicEngineeringNon-StandardSubstratesSilicon-on-GlassSilicon-on-Sapphire•Flatpaneldisplay•Improvesthermalandhighfrequency•CapacitivesensorsperformanceofinterconnectscomparedtoSOI.•Solarcells•RadiationHradness•Micromachining•Betterheatdissipationthanquartz•Microwavecctapplica

4、tionsSOSpreviouslyachievedusingepitaxialgrowth-highdensityofdislocations-highleakagecurrentNorthernIrelandSemiconductorResearchCentreSchoolofElectricalandElectronicEngineeringSilicon-On-Glass•AnodicbondingofsiliconandotherSPACECHARGEmaterialstoglass.REGIONANODE------------------------550oC,1

5、000V,1Hr+VEGLASSSUBSTRATE++++++++++++++++++•Problems–ThermalcoefficientMOBILECATHODEofexpansion.ALKALINEIONS.–HighAlkalicontent–LowTemperatureProcessing.NorthernIrelandSemiconductorResearchCentreSchoolofElectricalandElectronicEngineeringSilicon-On-GlassSelectivebondingofsilicontoglassSilicon

6、dioxide/glassbondBondtemperature550oC,BondingVoltage1000V,BondingTime1HrNorthernIrelandSemiconductorResearchCentreSchoolofElectricalandElectronicEngineeringSilicon-On-SapphireDislocationfreeSOScanbeachievedthrough:•WaferbondingTechniques•ActivewaferthinningtechnologyHowever:•Thermalcoef.ofex

7、pansionnotmatchedtoSi.5x10-6/oCforsapphirecomparedto3.6x10-6/oCforSi.•SilicondioxidelayerneededforbondingNorthernIrelandSemiconductorResearchCentreSchoolofElectricalandElectronicEngineeringBondingofSilicontoSapphireIRImageofSi/SapphireIRimageofSiOb