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1、3rdWorldConferenceonPhorovolraicEneraConversionMay11-18.2003Osaka,Jopon40-C13-01PASSIVATIONOFCRYSTALLINESILICONUSINGSILICONNITRIDEAndrtsCuevas,MarkJ.KedandJanSchmidt2FacultyofEngineering,TheAustralianNationalUniversity,Canberra,Australia'Presentaddress:OriginEnergy,Adelaide,SouthAustralia21nstit
2、utfiirSolarenergieforschungHameldEmmenhal(ISFH),Emmerthal,GermanyABSTRACTmakestheplasmafrequencyaveryimportantparameterforthistypeofreactors,whichcaninturnbedividedinTheextraordinarycapacityofplasma-enhancedtwosub-categories:low-frequency(IO-500kHr)andhigh-chemical-vapour-deposited(PECVD)silicon
3、nitride(SIN)frequency(>4MHz,withatypicalvalueof13.56MHz).topassivatethesurfaceofcrystallinesiliconwafersand,inThemainadvantageofusingahighfrequencyliesinthethecaseofmulticrystallinesilicon,improvethebulkfactthattheionsintheplasmacannotfollowthematerialbyhydrogenationhasattractedagreatdealofexcit
4、ationoftheelectromagneticfields,andsoionresearchanddevelopment.Thisreviewsummarizesthebombardmentofthcsubstratesurfaceisminimized.ThestateoftheartofsurfacepassivationbyPECVDSIN,secondmajorclassofreactorsisformedbythetogethcrwiththepresentundcrstandingofthcphysicaldownstream-remoterystcms,whereth
5、eprocessgas("3)mechanismsthatunderlieit.TheimpactofSINonisexcitedoutsidethedepositionchamberbymeansofultimatesolarcellperformanceisdiscussedandanmicrowaves,ahotwire[IO]orothermethods(suchasoptimizationofSiNpassivatedn'emittersispresented.intenseUVlight).AnimportantfeatureoftheseremoteFinally,the
6、experimentalevidenceofSiN-inducedPECVDsystemsisthatthesiliconsubstratesarenotinhydrogenationofmc-Siisdiscussedandareasforfurtherdirectcontactwithoneoftheelectrodesusedforworkaresuggested.generatingtheplasma,whichinprincipleavoidsionbombardmentdamageandmakesthefrcquencyrelativelyunimportant.1.INT
7、RODUCTIONThebestelectronicqualityintcrmsofsurfacepassivationhasbeenobtainedwithdirecthigh-frequencyThevirtuesofPECVDSiNforsiliconsolarcellswerereactorsandalsowithremotePECVDreactors,whilelowfirstoutlinedbyR.Hczelin1981[I]:ex
