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ID:34974556
大小:928.47 KB
页数:27页
时间:2019-03-15
《Preparation of Silicon Wafers.pdf》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、PreparationofSiliconWafersCrystalGrowth長晶Granular(顆粒)polysiliconinmeltphaseRawMaterial:融化(polysilicon)原始材料Chunk(塊狀)polysiliconinmeltphaseSeed(晶種)andIngot(晶錠)CrystalPulling拉晶FinishedIngot晶錠完成Crystaltrimming(修整)and修整與研磨diametergrind(研磨)Flatgrinding平口端之研磨ZonerefiningEdgeRounding(變圓)Slicing(切片)Lappin
2、g(細研磨)LappingWaferEtching(蝕刻)Polishing(拋光)Polishing(拋光)EpitaxialGrowth磊晶EpitaxialLayer(磊晶層)EpitaxialGrowth磊晶EpitaxialLayerSi99.9999999999%SubstrateSi99.9999999%WaferIdentifyingFlatsMethodsforEpitaxial(磊晶)Growth磊晶的方法1.ChemicalVaporDeposition(CVD;化學氣相沈積法):siliconbased,germaniumbased,2.MolecularBeam
3、Epitaxy(MBE;分子磊晶法):GaAsbased,ChemicalVaporDeposition(CVD)SiH4(1)GastransportgasgasSiH4H2(2)PrecursorsSiH4SiH2H2(byproduct)SiH2SiH4Si2H6(precursors)substrateHeater200~300°CCVDMethodChemicalVaporDeposition(CVD)SiH4(1)Gastransportgasgas(3)PrecursorsatwafersubstrateHeater200~300°CCVDMethodChemic
4、alVaporDeposition(CVD)SiH4(1)Gastransportgasgas(4)Precursorsadsorption(5)PrecursorsdiffusionsubstrateHeater200~300°CCVDMethodChemicalVaporDeposition(CVD)SiH4(1)Gastransportgasgas(6)SurfacereactionssubstrateHeater200~300°CCVDMethodChemicalVaporDeposition(CVD)SiH4(1)GastransportgasgasH2(7)By-produc
5、tremovalfromsurfaceSisubstrateHeater200~300°CCVDMethod補充:Silicon矽Si,Silica二氧化矽SiO2Silicon矽substrateHeater200~300°CCVDMethodChemicalVaporDeposition(CVD)1.Gastransporttodepositionzone:Masstransportofgasinthemaingasflowregionfromthereactorinlet(入口)tothedepositionzoneofthewafer.2.Formationoffilmprecu
6、rsors(先前物):Gas-phasereactionsleadingtotheformationofthefilmprecursorsandby-product(副產品).3.Filmprecursoratwafer:Masstransportofthefilmprecursorstothewafergrowthsurface.4.Precursorsadsorption(吸附):Adsorption(binding)offilmprecursortothesurface.ChemicalVaporDeposition(CVD)5.Precursorsdiffusion:Surfac
7、ediffusionoffilmprecursortothefilmgrowthsites.6.Surfacereactions:Surfacechemicalreactionsleadingtofilmdepositionandby-products.7.By-productremovalfromsurface:Desorption(吸解)(removal)oftheby-productsofthesurfacereactions
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