wafer工艺流程.ppt

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1、CZ6BasicflowintroductionProcessFeatureCZ6Hprocess(1P3M)+optionlayer(MECAP,R-poly,CodeP)0.45umLV(5V)logictechnologyCZ6HOTP(onetimeprogram)process(1P3M)+optionlayer(MECAP,R-poly)0.45umLV(5V)logictechnologyRecessLOCOS(700A)Polycideex-situPolyPOCl3Diffusion1500A+WSI1750A12/T

2、i-silicideProcessMetal1(4500Al/100Ti/300TiN),Metal2/3(6200Al/100Ti/300TiN),Metal4(9000Al/100Ti/300TiN),TTOPME(30000Al/100Ti/300TiN)MIPmodule(0.78fF/um2),HTO400ARPOLY(500ohm/squareexsitu-Poly)module,1K,2K,5KdevelopedPassivation:CZ6H:1200TEOS+10KSION+PolyimideCZ6HOTP:1200TEOS

3、+10KUVSION21.WAFERSTART2.OXIDEWETETCH(LAL800;3MIN;S/D)-removenativeOX3.AA_OXTOX(900C;210A)-PADOXtobufferNitridestress4.AANITRIDEDEP(760C;1500A4000LOCOS)-SuppressOXlateraldiffuse@LOCOSgrown5.AAPHOTO6.AASINETCH7.PRASH(250C)8.PRSTRIP(SPM+CAPM;NORMAL)9.FIELDOXIDATION(1100C;4000

4、A)10.OXIDEWETETCH(DHF;200A)11.SINWETETCH(65MIN)12.OXIDEWETETCH(LL130;2MIN)13.SAC0_OX(900C;210A)-protectSisurfacefromPRcontaminationandserveasscreenOXwhenN/PwellIMPPSUBPSUBLOCOS3PSUB5.PW_PH6.PW_IMPPWELLIMPLANT1B300K100E3A63B32R00(WellForm)PWELLIMPLANT2B120K350E2T07W23R00(Cha

5、nnelStop)PWELLIMPLANT3B070K150E2T07W23R00(APTIMP)PWELLIMPLANT4B030K175E2T07W23R00(VTadjust)7.PRASH8.PRSTRIP(SPM+CAPM;NORMAL)1.NW_PH2.NW_IMPNWELLIMP1P700K150E3A63B32R00(WellForm)NWELLIMP2P260K120E2T07W23R00(ChannelStop)NWELLIMP3P150K150E2T07W23R00(APTIMP)NWELLIMP4B015K185E2T

6、07W23R00(VTadjust)3.PRASH4.PRSTRIP(SPM+CAPM;NORMAL)PSUBNWELLPWELLPWELL41.OXIDEWETETCH(LL130;90SEC)2.GATEOXIDATION(850C;155A)8.CAPTOPWSIDEP(SPUTTER:2000A)3.GATEPOLYDEP(620C;1500A;O2LEAK)9.CAPTOPOXIDEDEP(APOX;1200A4.PHOSPHORUSDIFFUSION10.CAPPHOTO5.PSGREMOVE(LL1304MIN+H2O24MIN

7、)11.CAP_ET6.GATEWSIDEP(SPUTTER:1750A)12.CAPPRASH7.HTODEP(400A)13.PRSTRIP(SPM+HAPM;SILICIDE)PSUBPSUBNWELLPWELLPWELLMCAP514.P1PHOTO15.POLYETCH16.NLDDIMPLANTPSUBPSUBNWELLPWELLPWELLNMOS6PSUBPSUBNWELLPWELLPWELL1.PLDDPHOTO2.PLDDIMPLANT3.PRSTRIP4.SPACERDEP(NSG;2000A)5.ANNEAL(950C;

8、30M)6.SPACERETCH7.SAC3OXIDEDEP7PSUBPSUBNWELLPWELLPWELL1.NP_PH3.NP_IMPN+IMPLANT1P10